NE3509M04-T2-A CEL, NE3509M04-T2-A Datasheet - Page 4

• Manufacturer Part Number: NE3509M04-T2-A
• Description: AMP HJ-FET 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NE3509M04-T2-A

• Transistor Type: HFET
• Frequency: 2GHz
• Gain: 17.5dB
• Voltage - Rated: 4V
• Current Rating: 60mA
• Noise Figure: 0.4dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Power - Output: 11dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 80 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
Remark The graphs indicate nominal characteristics.
0
f = 2.5 GHz, V
10
Drain Current I
DS
= 2 V
–10
–20
–30
–40
–50
–60
–70
–80
40
30
20
10
–25
0
20
D
(mA)
–20
OUTPUT POWER, IM
vs. INPUT POWER
P
30
out (2 tone)
G
NF
a
–15
min
IM
3 (L)
Input Power P
Data Sheet PG10608EJ01V0DS
40
–10
20
18
16
14
12
10
8
6
4
2
0
I
D
OIP
–5
3
= +25 dBm
3,
in (2 tone)
DRAIN CURRENT
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
IM
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
(dBm)
3 (H)
0
1.0
f = 2.5 GHz,
I
IIP
D
f = 2.5 GHz, I
= 10 mA (Non-RF)
3
= +7.5 dBm
5
Drain to Source Voltage V
1.5
V
D
10
DS
= 10 mA
=
2.0
2 V
NF
G
15
min
a
2.5
50
45
40
35
30
25
20
15
10
5
0
DS
3.0
(V)
NE3509M04
3.5
20
18
16
14
12
10
8
6
4
2
0