ATF-551M4-TR1 Avago Technologies US Inc., ATF-551M4-TR1 Datasheet - Page 5

• Manufacturer Part Number: ATF-551M4-TR1
• Description: IC TRANS E-PHEMT GAAS MINIPAK
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-551M4-TR1

• Gain: 17.5dB
• Mfg Application Notes: ATF-541M4 AppNote
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.5dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.6dBm
• Package / Case: 4-MiniPak (1412)
• Power Dissipation Pd: 270mW
• Rf Transistor Case: MiniPak
• Frequency Max: 10GHz
• Noise Figure Typ: 0.5dB
• Frequency Min: 450MHz
• Continuous Drain Current Id: 0.1µA
• Drain Current Idss Max: 10mA
• Drain Source Voltage Vds: 2.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 516-1509-2

ATF-551M4 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz with biasing 2.7V, 10 mA were made on a fixed tuned production test board that was tuned for optimal OIP3 match
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
5
Figure 11. Gain vs. I
Figure 14. IIP3 vs. I
with reasonable noise figure. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match
based on production test board requirements. Measurements taken other than 2.7V, 10 mA biasing was made using a double stub tuner at
the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from
actual measurements.
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
20
19
18
17
16
15
18
16
14
12
10
8
6
4
2
0
0
0
5
5
10
10
I
I
15
15
ds
ds
ds
ds
(mA)
(mA)
and V
and V
20
20
ds
ds
25
25
at 2 GHz
at 2 GHz
30
30
2V
2.7V
3V
2V
2.7V
3V
[1]
[1]
.
35
35
.
Figure 12. Fmin vs. I
Figure 15. P1dB vs. I
17
16
15
14
13
12
11
10
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
5
5
10
10
I
I
15
15
ds
ds
ds
ds
(mA)
(mA)
and V
and V
20
20
ds
ds
25
25
at 2 GHz
at 2 GHz
2V
2.7V
3V
30
2V
2.7V
3V
30
[2]
[1]
35
35
.
.
Figure 13. OIP3 vs. I
36
32
28
24
20
16
0
5
10
I
15
ds
ds
(mA)
and V
20
ds
25
at 2 GHz
30
2V
2.7V
3V
[1]
35
.