ATF-551M4-TR2 Avago Technologies US Inc., ATF-551M4-TR2 Datasheet - Page 8

• Manufacturer Part Number: ATF-551M4-TR2
• Description: IC PHEMT 2GHZ 2.7V 10MA MINIPAK
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-551M4-TR2

• Gain: 17.5dB
• Mfg Application Notes: ATF-541M4 AppNote
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.5dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.6dBm
• Package / Case: 4-MiniPak (1412)
• Drain Source Voltage Vds: 2.7V
• Continuous Drain Current Id: 100mA
• Power Dissipation Pd: 270mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: MiniPak
• No. Of Pins: 4
• Frequency Max: 10GHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ATF-551M4 Typical Scattering Parameters, V
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Typical Noise Parameters, V
Freq
GHz
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at

these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
the end of the gate pad. The output reference plane is at the end of the drain pad.
Mag.
0.995
0.954
0.906
0.896
0.833
0.790
0.781
0.739
0.710
0.683
0.679
0.680
0.681
0.683
0.690
0.687
0.691
0.696
0.713
0.747
0.759
0.808
0.828
0.870
F
dB
0.24
0.24
0.28
0.45
0.39
0.47
0.55
0.61
0.74
0.89
0.90
1.03
1.13
1.27
1.53
min
S
11
Ang.
-6.0
-29.1
-50.7
-55.7
-79.5
-96.5
-100.4
-118.5
-134.4
-160.0
-179.8
166.5
154.0
143.7
132.7
119.7
106.5
92.6
81.8
67.4
55.5
45.4
37.3
30.9
Γ
Mag.
0.62
0.56
0.52
0.47
0.47
0.42
0.35
0.32
0.33
0.36
0.37
0.38
0.44
0.48
0.46
opt
DS
= 2V, I
Γ
Ang.
-4.3
8.8
13.5
38.6
42.9
52.8
74.0
105.4
144.0
164.3
166.1
-170.9
-157.2
-142.4
-126.0
opt
dB
20.41
19.95
19.35
19.18
18.15
17.22
17.00
15.84
14.74
12.75
11.03
9.65
8.43
7.43
6.53
5.72
4.98
4.28
3.53
2.82
1.97
1.00
-0.01
-1.04
DS
= 10 mA
DS
R
0.14
0.13
0.12
0.11
0.11
0.11
0.09
0.08
0.06
0.05
0.05
0.06
0.07
0.09
0.17
n/50
Mag.
10.479
9.946
9.280
9.103
8.080
7.260
7.078
6.197
5.459
4.341
3.559
3.036
2.638
2.353
2.122
1.932
1.775
1.636
1.501
1.384
1.255
1.122
0.999
0.887
= 2V, I
S
21
DS
= 10 mA
G
dB
23.50
21.66
21.61
18.04
17.88
16.76
15.66
14.10
12.74
11.83
11.63
10.71
9.99
9.36
8.46
Ang.
175.9
158.2
144.2
141.0
125.6
114.9
112.5
101.1
91.2
74.5
60.3
48.5
37.2
26.4
15.7
4.5
-6.4
-17.7
-28.6
-40.4
-51.8
-62.4
-72.7
-82.6
a
Figure 26. MSG/MAG and |S
Frequency at 2V, 10 mA.
-10
Mag.
0.007
0.031
0.052
0.056
0.075
0.085
0.087
0.095
0.099
0.104
0.105
0.107
0.107
0.110
0.113
0.117
0.122
0.129
0.135
0.143
0.149
0.153
0.157
0.159
40
30
20
10
0
0
S
MSG
12
5
Ang.
86.3
71.6
60.8
58.3
46.8
39.0
37.3
29.8
23.7
14.8
8.6
5.0
2.1
-0.3
-2.6
-5.4
-8.4
-12.3
-16.2
-21.8
-27.4
-33.3
-39.2
-45.2
|S
FREQUENCY (GHz)
21
|
2
10
MAG
Mag.
0.803
0.758
0.710
0.692
0.611
0.547
0.532
0.463
0.404
0.318
0.263
0.220
0.199
0.185
0.181
0.185
0.196
0.209
0.206
0.211
0.237
0.269
0.322
0.383
21
15
|
2
S
vs.
22
MSG
Ang.
-3.3
-15.6
-27.4
-30.2
-42.3
-50.4
-52.3
-60.6
-67.6
-79.6
-91.2
-99.5
-111.0
-123.4
-137.7
-151.1
-163.5
-174.4
171.4
151.2
131.8
113.3
95.4
80.1
20
MSG/MAG
dB
31.75
25.06
22.52
22.11
20.32
19.32
19.10
18.14
17.41
16.21
15.30
14.53
13.92
13.30
11.27
9.97
9.14
8.44
7.80
7.62
6.73
6.90
6.20
7.47