BLF6G27-10,112 NXP Semiconductors, BLF6G27-10,112 Datasheet
BLF6G27-10,112
Specifications of BLF6G27-10,112
BLF6G27-10
BLF6G27-10
Related parts for BLF6G27-10,112
BLF6G27-10,112 Summary of contents
Page 1
... BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 — 28 February 2011 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. Table 1. RF performance at T Mode of operation 1-carrier N-CDMA ...
Page 2
... NXP Semiconductors 2. Pinning information Table 2. Pin BLF6G27-10 (SOT975B BLF6G27-10G (SOT975C [1] Connected to flange. 3. Ordering information Table 3. Type number Package BLF6G27-10 BLF6G27-10G - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G ...
Page 3
... D ACPR 885k ACPR 1980k [1] Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G27-10 and BLF6G27-10G are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G Thermal characteristics Parameter Conditions ...
Page 4
... 130 mA 2600 MHz Fig 1. EVM as a function of load power; typical values BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G Frame structure 2 symbols × 4 subchannels FCH 2 symbols × 26 subchannels data 44 symbols × 30 subchannels data 001aaj351 G (dB (W) L Fig 2. All information provided in this document is subject to legal disclaimers. ...
Page 5
... G p (dB 2500 2540 2580 130 mA; Single Carrier IS-95 PAR = 9 0.01 % probability. Fig 4. Power gain and drain efficiency as function of frequency; typical values BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G 20 ACPR (dBc 001aaj354 23 D (%) 2620 2660 2700 f (MHz) Fig 5. All information provided in this document is subject to legal disclaimers. ...
Page 6
... 130 mA; single carrier IS-95 PAR = 9 0.01 % probability; channel bandwidth = 1.23 MHz. ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 8. Power gain as a function of load power; typical values BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G 001aaj356 50 D ACPR (%) (dBc (W) L(AV) (1) Low frequency component (2) High frequency component Fig 7 ...
Page 7
... NXP Semiconductors 8. Test information Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10 BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G BLF6G27-10 Input Rev 2 NXP PCB1 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε thickness = 0.76 mm. ...
Page 8
... NXP Semiconductors Fig 11. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10G Table 9. For test circuit, see Component C1, C3, C5 R1, R2 BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G BLF6G27-10G Input Rev 1 NXP PCB1 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε ...
Page 9
... BLF6G27-10G 2.50 2.55 2.60 2.65 2.70 BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G Measured test circuit impedances Z i (Ω) 5.32 − j8.61 4.85 − j8.09 4.40 − j7.55 3.98 − j7.00 3.59 − j6.43 5.67 − j13.62 5.06 − j12.79 4.55 − ...
Page 10
... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 3.63 3.38 0.23 6.55 mm 3.05 3.23 0.18 6.40 0.143 0.133 0.009 0.258 inches 0.120 0.127 0.007 0.252 OUTLINE VERSION IEC SOT975B Fig 12. Package outline SOT975B BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G scale 6.93 6.55 6.93 0.23 11 ...
Page 11
... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 3.63 3.38 0.23 6.55 mm 3.05 3.23 0.18 6.40 0.143 0.133 0.009 0.258 inches 0.120 0.127 0.007 0.252 OUTLINE VERSION IEC SOT975C Fig 13. Package outline SOT975C BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G scale 6.93 6.55 6.93 0.23 10 ...
Page 12
... Revision history Table 12. Revision history Document ID BLF6G27-10_BLF6G27-10G v.3 Modifications: BLF6G27-10_BLF6G27-10G v.2 BLF6G27-10_BLF6G27-10G v.1 BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Error Vector Magnitude Frame Control Header Fast Fourier Transform Instantaneous BandWidth Interim Standard 95 Laterally Diffused Metal-Oxide Semiconductor ...
Page 13
... BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
Page 14
... For sales office addresses, please send an email to: BLF6G27-10_BLF6G27-10G Product data sheet BLF6G27-10; BLF6G27-10G NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
Page 15
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G27-10_BLF6G27-10G All rights reserved. Date of release: 28 February 2011 ...