BLF6G27-45,112 NXP Semiconductors, BLF6G27-45,112 Datasheet
BLF6G27-45,112
Specifications of BLF6G27-45,112
BLF6G27-45
BLF6G27-45
Related parts for BLF6G27-45,112
BLF6G27-45,112 Summary of contents
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... BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 03 — 15 December 2008 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. RF performance at T Mode of operation 1-carrier N-CDMA [1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...
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... Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S-45 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged ceramic package; 2 mounting holes; 2 leads - ceramic earless fl ...
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... ACPR 885k ACPR 1980k [1] Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G27-45 and BLF6G27S-45 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S-45 Thermal characteristics Parameter Conditions thermal resistance from ...
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... 350 mA 2600 MHz; single carrier DS Dq N-CDMA; PAR = 9 0.01 % probability; channel bandwidth = 1.23 MHz; instantaneous bandwidth = 30 kHz. Fig 1. Power gain and drain efficiency as functions of average load power; typical values BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S-45 001aah406 50 30 ACPR D (%) (dBc (W) L(AV) (1) Low frequency component (2) High frequency component Fig 2 ...
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... MHz tone spacing. ( 250 300 350 400 500 mA Dq Fig 3. Power gain as function of peak envelope load power; typical values BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S-45 001aah408 15 IMD3 (dBc (W) L(PEP) = 2601.25 MHz; 2 (1) I (2) I (3) I (4) I (5) I Fig 4. Rev. 03 — ...
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... NXP Semiconductors 7.4 Continuous wave (dB 350 mA 2600 MHz Fig 5. Power gain and drain efficiency as functions of CW load power; typical values BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S-45 001aah410 (%) (dB ( case DS Fig 6. Rev. 03 — 15 December 2008 WiMAX power LDMOS transistor (5) ( L(CW 350 mA 2600 MHz; T ...
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... Fig 7. Power gain and drain efficiency as functions of frequency; typical values 350 mA; single carrier N-CDMA; PAR = 9 0.01 % probability; instantaneous bandwidth = 30 kHz Fig 9. Power gain and input return loss as functions of frequency BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S-45 001aah412 (%) ACPR G p (dBc ...
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... 2500 2550 2600 350 mA; single carrier N-CDMA PAR = 9 0.01 % probability; instantaneous bandwidth = 30 kHz. Fig 10. Power gain and drain efficiency as functions of frequency; typical values BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S-45 001aah414 (%) ACPR (dBc 2650 2700 2500 f (MHz) V PAR = 9 0.01 % probability; instantaneous bandwidth = 30 kHz. ...
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... NXP Semiconductors 8. Test information input C1 See Table 8 for list of components. Fig 12. Test circuit for operation at 2500 MHz to 2700 MHz BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S- Rev. 03 — 15 December 2008 WiMAX power LDMOS transistor C10 C11 C12 C13 © NXP B.V. 2008. All rights reserved. ...
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... C5, C10, C11, C12, C13 multilayer ceramic chip capacitor 4 tantalum capacitor C9 multilayer ceramic chip capacitor 8.2 pF C14 electrolytic capacitor L1 ferrite SMD bead R1 resistor R2 resistor Q1 BLF6G27-45 or BLF6G27S-45 [1] American Technical Ceramics type 100B or capacitor of same quality. BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S-45 short ( BLF6G27-45 ...
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... NXP Semiconductors Table 9. f (GHz) 2.50 2.55 2.60 2.65 2.70 BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S-45 Measured test circuit impedances 11.1 j11.0 10.6 j10.8 10.1 j10.5 9.6 j10.2 9.1 j9.8 Rev. 03 — 15 December 2008 WiMAX power LDMOS transistor 18.4 j9.1 16.9 j9 ...
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... UNIT 7.24 4.62 0.15 10.21 mm 6.99 3.76 0.10 10.01 0.182 0.285 0.402 0.006 inches 0.148 0.275 0.394 0.004 OUTLINE VERSION IEC SOT608A Fig 14. Package outline SOT608A BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S- scale 10.29 10.21 10.29 1.14 15.75 3.30 2.92 10.03 10 ...
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... DIMENSIONS (mm dimensions are derived from the original inch dimensions) UNIT 4.62 7.24 0.15 10.21 mm 3.76 6.99 0.10 10.01 0.182 0.285 0.006 0.402 inch 0.148 0.275 0.004 0.394 OUTLINE VERSION IEC SOT608B Fig 15. Package outline SOT608B BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S- scale 10.29 10.21 10.29 1.14 15 ...
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... Table 11. Revision history Document ID BLF6G27-45_BLF6G27S-45_3 20081215 Modifications: BLF6G27-45_BLF6G27S-45_2 20080207 BLF6G27-45_BLF6G27S-45_1 20080129 BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S-45 Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Laterally Diffused Metal-Oxide Semiconductor Narrowband Code Division Multiple Access Peak-to-Average power Ratio Radio Frequency Surface Mounted Device ...
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... For more information, please visit: For sales office addresses, please send an email to: BLF6G27-45_BLF6G27S-45_3 Product data sheet BLF6G27-45; BLF6G27S-45 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G27-45_BLF6G27S-45_3 All rights reserved. Date of release: 15 December 2008 ...