MCR716T4G ON Semiconductor, MCR716T4G Datasheet - Page 2

• Manufacturer Part Number: MCR716T4G
• Description: THYRISTOR SCR 4A 400V DPAK
• Manufacturer: ON Semiconductor

Specifications of MCR716T4G

• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 2.2V
• Current - On State (it (av)) (max): 2.6A
• Current - On State (it (rms)) (max): 4A
• Current - Gate Trigger (igt) (max): 75µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 25A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 4A
• Breakover Current Ibo Max: 25 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• On-state Rms Current (it Rms): 4 A
• Forward Voltage Drop: 1.3 V
• Gate Trigger Voltage (vgt): 0.5 V
• Maximum Gate Peak Inverse Voltage: 18 V
• Gate Trigger Current (igt): 25 uA
• Holding Current (ih Max): 1 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR716T4GOS; MCR716T4GOS; MCR716T4GOSTR

2. Case 369C, when surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or R
4. Pulse Test: Pulse Width ≤ 2 ms, Duty Cycle ≤ 2%.
5. R
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MCR716T4
MCR716T4G
MCR718T4
MCR718T4G
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current; R
Peak Reverse Gate Blocking Voltage (I
Peak Reverse Gate Blocking Current (V
Peak Forward On−State Voltage (Note 4)
Gate Trigger Current (Continuous dc) (Note 5)
Gate Trigger Voltage (Continuous dc) (Note 5)
Holding Current (Note 3)
Latching Current (Note 3) (R
Total Turn-On Time
Critical Rate of Rise of Off−State Voltage
Repetitive Critical Rate of Rise of On−State Current
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(V
(I
(I
(V
(V
(V
(V
(V
(Source Voltage = 12 V, R
(V
(V
(f = 60 Hz, I
GK
TM
TM
AK
D
D
D
D
D
D
D
current not included in measurements.
= 12 Vdc, R
= 12 Vdc, R
= 12 Vdc, Initiating Current = 20 mA, R
= 12 Vdc, I
= 12 Vdc, I
= Rated V
= 0.67 x Rated V
= 5.0 A Peak)
= 8.2 A Peak)
= Rated V
PK
DRM
= 30 A, PW = 100 ms, dIG/dt = 1 A/ms)
G
G
DRM
L
L
= 2.0 mA, T
= 2.0 mA, T
Device
= 30 W)
= 30 W)
, Rise Time = 20 ns, Pulse Width = 10 ms)
or V
DRM
RRM
, R
GK
S
= 6 kW, I
GK
)
C
C
= 1 kW)
= 25°C)
= −40°C)
Characteristic
Characteristic
= 1 kW, Exponential Waveform, T
T
GR
GR
(T
= 8 A(pk), R
C
= 10 mA)
= 10 V)
= 25°C unless otherwise noted.)
GK
GK
= 1 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
= 1 kW)
GK
= 1 kW)
http://onsemi.com
GK
= 1 kW (Note 3)
T
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
C
= 25°C
= 110°C
= 25°C
= −40°C
= 25°C
= −40°C
= 110°C
= 25°C
= −40°C
(Pb−Free)
(Pb−Free)
Package
DPAK
DPAK
DPAK
DPAK
2
J
= 110°C)
Symbol
Symbol
V
R
I
I
I
dv/dt
R
V
di/dt
V
DRM
RRM
RGM
I
RGM
T
t
GT
I
qJC
qJA
I
TM
GT
gt
H
L
L
2500 / Tape and Reel
Min
1.0
0.3
0.2
0.4
5.0
10
−
−
−
−
−
−
−
−
−
−
−
−
Shipping
Max
12.5
0.55
260
Typ
3.0
1.3
1.5
1.0
2.0
80
25
10
−
−
−
−
−
−
−
−
−
−
†
Max
200
300
100
1.2
1.5
2.2
0.8
1.0
5.0
5.0
5.0
10
18
75
10
10
−
−
°C/W
°C/W
V/ms
A/ms
Unit
Unit
mA
mA
°C
mA
mA
mA
ms
V
V
V