THYRISTOR SCR 0.8A 100V TO-92

2N5062G

Manufacturer Part Number2N5062G
DescriptionTHYRISTOR SCR 0.8A 100V TO-92
ManufacturerON Semiconductor
2N5062G datasheets
 


Specifications of 2N5062G

Scr TypeSensitive GateVoltage - Off State100V
Voltage - Gate Trigger (vgt) (max)800mVVoltage - On State (vtm) (max)1.7V
Current - On State (it (av)) (max)510mACurrent - On State (it (rms)) (max)800mA
Current - Gate Trigger (igt) (max)200µACurrent - Hold (ih) (max)5mA
Current - Off State (max)10µACurrent - Non Rep. Surge 50, 60hz (itsm)10A @ 60Hz
Operating Temperature-40°C ~ 110°CMounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226Current - On State (it (rms) (max)800mA
Current Squared Time Rating0.4Current, Forward0.8 A
Current, Surge10 APackage TypeTO-92 (TO-226)
Primary TypeSCRResistance, Thermal, Junction To Case75 °C/W
Temperature, Junction, Maximum+110 °CTemperature, Operating-40 to +110 °C
Voltage, Forward1.7 VVoltage, Reverse100 V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names2N5062G
2N5062GOS
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2N5060 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO−92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.
Features
Sensitive Gate Trigger Current − 200 mA Maximum
Low Reverse and Forward Blocking Current − 50 mA Maximum,
T
= 110°C
C
Low Holding Current − 5 mA Maximum
Passivated Surface for Reliability and Uniformity
Device Marking: Device Type, e.g., 2N5060, Date Code
Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 9
http://onsemi.com
SILICON CONTROLLED
RECTIFIERS
0.8 A RMS, 30 − 200 V
A
TO−92
CASE 29
STYLE 10
1 2
3
50xx
Specific Device Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
G
K
MARKING
DIAGRAM
2N
50xx
YWW
Cathode
Gate
Anode
Publication Order Number:
2N5060/D

2N5062G Summary of contents

  • Page 1

    ... Device Marking: Device Type, e.g., 2N5060, Date Code • Pb−Free Packages are Available* *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 November, 2008 − Rev. 9 http://onsemi ...

  • Page 2

    MAXIMUM RATINGS (T = 25°C unless otherwise noted) J Rating Peak Repetitive Off−State Voltage (Note *40 to 110°C, Sine Wave Hz kW) 2N5060 GK 2N5061 2N5062 2N5064 On-State Current RMS ...

  • Page 3

    ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (Note Rated DRM RRM ON CHARACTERISTICS *Peak Forward On−State Voltage (Note 1.2 A peak @ T = ...

  • Page 4

    CONDUCTION ANGLE 120 110 100 30° 60° 0.1 0.2 0 AVERAGE ON‐STATE CURRENT (AMP) T(AV) Figure 1. Maximum Case Temperature 5.0 3.0 2 110°C J ...

  • Page 5

    T , JUNCTION TEMPERATURE (°C) J Figure 7. Typical Gate Trigger Voltage 4.0 3.0 2.0 1.0 0.8 0.6 ...

  • Page 6

    ... Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

  • Page 7

    ... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...