50RIA120 Vishay, 50RIA120 Datasheet - Page 2

• Manufacturer Part Number: 50RIA120
• Description: SCR MED POWER 1200V 50A TO-65
• Manufacturer: Vishay

Specifications of 50RIA120

• Scr Type: Standard Recovery
• Voltage - Off State: 1200V
• Voltage - Gate Trigger (vgt) (max): 2.5V
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 50A
• Current - On State (it (rms)) (max): 80A
• Current - Gate Trigger (igt) (max): 100mA
• Current - Hold (ih) (max): 200mA
• Current - Off State (max): 15mA
• Current - Non Rep. Surge 50, 60hz (itsm): 1430A, 1490A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-208AC, TO-65
• Current - On State (it (rms) (max): 80A
• Breakover Current Ibo Max: 1490 A
• Rated Repetitive Off-state Voltage Vdrm: 1600 V
• Off-state Leakage Current @ Vdrm Idrm: 1.5 A
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 2.5 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *50RIA120; VS-50RIA120; VS-50RIA120; VS50RIA120; VS50RIA120

50RIA Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
www.vishay.com
2
VOLTAGE RATINGS
TYPE NUMBER
50RIA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
For voltage pulses with t
2
2
t for fusing
√t for fusing
VOLTAGE
p
CODE
≤ 5 ms
100
120
10
20
40
60
80
SYMBOL
For technical questions, contact: [e-mail]
V
V
I
I
T(RMS)
I
T(TO)1
T(TO)2
V
T(AV)
OFF-STATE VOLTAGE
TSM
REPETITIVE PEAK AND
I
I
r
r
I
I
2
2
TM
t1
t2
H
L
V
t
√t
DRM
/V
Medium Power Thyristors
RRM
180° sinusoidal conduction
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied,
T
(16.7 % x π x I
(π x I
(16.7 % x π x I
(π x I
I
T
initial I
Anode supply 6 V, resistive load
pk
1000
1200
J
J
(Stud Version), 50 A
100
200
400
600
800
V
= T
= 25 °C, anode supply 22 V, resistive load,
= 157 A, T
, MAXIMUM
T(AV)
T(AV)
J
T
maximum
= 2 A
< I < 20 x π x I
< I < 20 x π x I
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
= 25 °C
(1)
TEST CONDITIONS
< I < π x I
< I < π x I
RRM
RRM
V
T(AV)
T(AV)
RSM
), T
), T
, MAXIMUM NON-REPETITIVE
T(AV)
T(AV)
Sinusoidal half wave,
initial T
PEAK VOLTAGE
J
J
), T
), T
= T
= T
J
J
J
J
J
= T
= T
maximum
maximum
= T
1100
1300
150
300
500
700
900
V
J
J
J
maximum
maximum
maximum
(2)
VALUES
10.18
101.8
1430
1490
1200
1255
9.30
7.20
6.56
0.94
1.08
4.08
3.34
1.60
Document Number: 93711
200
400
50
94
80
AT T
I
DRM
Revision: 19-Sep-08
J
/I
RRM
= T
mA
J
15
MAXIMUM
MAXIMUM
UNITS
kA
kA
mΩ
mA
°C
A
A
A
V
V
2
2
s
√s