50RIA120 Vishay, 50RIA120 Datasheet - Page 3

• Manufacturer Part Number: 50RIA120
• Description: SCR MED POWER 1200V 50A TO-65
• Manufacturer: Vishay

Specifications of 50RIA120

• Scr Type: Standard Recovery
• Voltage - Off State: 1200V
• Voltage - Gate Trigger (vgt) (max): 2.5V
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 50A
• Current - On State (it (rms)) (max): 80A
• Current - Gate Trigger (igt) (max): 100mA
• Current - Hold (ih) (max): 200mA
• Current - Off State (max): 15mA
• Current - Non Rep. Surge 50, 60hz (itsm): 1430A, 1490A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-208AC, TO-65
• Current - On State (it (rms) (max): 80A
• Breakover Current Ibo Max: 1490 A
• Rated Repetitive Off-state Voltage Vdrm: 1600 V
• Off-state Leakage Current @ Vdrm Idrm: 1.5 A
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 2.5 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *50RIA120; VS-50RIA120; VS-50RIA120; VS50RIA120; VS50RIA120

Note
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Document Number: 93711
Revision: 19-Sep-08
SWITCHING
PARAMETER
Maximum rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90
V
V
DRM
DRM
≤ 1600 V
≤ 600 V
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
SYMBOL
P
dV/dt
+V
-V
P
dI/dt
V
V
I
G(AV)
I
I
GM
GD
GT
GM
t
t
GD
GT
GM
d
q
GM
Medium Power Thyristors
(Stud Version), 50 A
T
T
T
T
T
T
T
T
T
V
T
T
Gate pulse = 20 V, 15 Ω, t
I
T
Gate pulse = 10 V, 15 Ω source, t
T
dIr/dt = - 10 A/µs, V
TM
J
J
J
J
J
J
J
J
J
J
C
C
C
DRM
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= T
= T
= 125 °C, V
= 25 °C, V
= 125 °C, I
= (2 x rated dI/dt) A
J
J
= Rated voltage
J
J
J
maximum linear to 100 % rated V
maximum linear to 67 % rated V
maximum, t
maximum,
maximum
DM
TM
DM
= Rated V
= 50 A, reapplied dV/dt = 20 V/µs
= Rated V
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
p
R
≤ 5 ms
= 50 V
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
applied
p
DRM
= 6 µs, t
DRM
, I
,
TM
DRM
Vishay High Power Products
p
= 10 A dc resistive circuit
= 20 µs
r
= 0.1 µs maximum
anode to cathode
DRM
DRM
50RIA Series
VALUES
VALUES
VALUES
500
200
100
110
200
250
100
0.9
2.5
2.5
3.5
2.5
5.0
0.2
10
20
10
50
www.vishay.com
(1)
UNITS
UNITS
UNITS
A/µs
V/µs
mA
mA
µs
W
A
V
V
V
3