MCR718T4G ON Semiconductor, MCR718T4G Datasheet - Page 3

• Manufacturer Part Number: MCR718T4G
• Description: THYRISTOR SCR 4A 600V DPAK
• Manufacturer: ON Semiconductor

Specifications of MCR718T4G

• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 2.2V
• Current - On State (it (av)) (max): 2.6A
• Current - On State (it (rms)) (max): 4A
• Current - Gate Trigger (igt) (max): 75µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 25A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR718T4GOS; MCR718T4GOS; MCR718T4GOSTR

100
105
100
1.0
0.1
110
10
95
Symbol
V
I
V
I
V
I
DRM
RRM
H
DRM
RRM
TM
0.5
0
Typical @ T
1.0
V
T
Figure 3. On−State Characteristics
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 1. RMS Current Derating
I
Parameter
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
Holding Current
1.0
T(RMS)
J
= 25°C
Maximum @ T
1.5
, RMS ON-STATE CURRENT (AMPS)
2.0
2.0
J
= 25°C
2.5
3.0
3.0
Voltage Current Characteristic of SCR
Maximum @ T
30°
DC
3.5
4.0
J
= 110°C
4.0
60°
90°
120°
180°
http://onsemi.com
4.5
5.0
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
3
at V
0.01
1.0
0.1
RRM
5.0
4.0
3.0
2.0
1.0
(off state)
0
0.1
0
Figure 4. Transient Thermal Response
on state
Figure 2. On−State Power Dissipation
1.0
I
1.0
T(RMS)
+ Current
, RMS ON-STATE CURRENT (AMPS)
Forward Blocking Region
I
H
10
2.0
t, TIME (ms)
V
TM
(off state)
I
100
DRM
3.0
Anode +
at V
Z
qJC(t)
DRM
1000
= R
+ Voltage
4.0
qJC(t)
DC
180°
120°
90°
60°
30°
•r(t)
10,000
5.0