MCR8DCNT4G ON Semiconductor, MCR8DCNT4G Datasheet

MCR8DCNT4G

Manufacturer Part Number

MCR8DCNT4G

Description

THYRISTOR SCR 8A 800V DPAK-4

Manufacturer

ON Semiconductor

Datasheet

1.MCR8DCMT4G.pdf (5 pages)

Specifications of MCR8DCNT4G

Scr Type

Standard Recovery

Voltage - Off State

800V

Voltage - Gate Trigger (vgt) (max)

Voltage - On State (vtm) (max)

1.8V

Current - On State (it (av)) (max)

5.1A

Current - On State (it (rms)) (max)

Current - Gate Trigger (igt) (max)

15mA

Current - Hold (ih) (max)

30mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

80A @ 60Hz

Operating Temperature

-40°C ~ 125°C

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Current - On State (it (rms) (max)

Breakover Current Ibo Max

80 A

Rated Repetitive Off-state Voltage Vdrm

800 V

Off-state Leakage Current @ Vdrm Idrm

0.01 mA

Forward Voltage Drop

1.8 V

Gate Trigger Voltage (vgt)

1 V

Gate Trigger Current (igt)

15 mA

Holding Current (ih Max)

30 mA

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MCR8DCNT4G
MCR8DCNT4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR8DCNT4G

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

MCR8DCNT4G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 5
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MCR8DCM, MCR8DCN

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

applications such as motor control; process control; temperature, light

and speed control.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. V

MAXIMUM RATINGS

November, 2005 − Rev. 4

Peak Repetitive Off−State Voltage

(Note 1) (T

50 to 60 Hz, Gate Open)

On−State RMS Current

(180° Conduction Angles; T

Average On−State Current

(180° Conduction Angles; T

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T

Circuit Fusing Consideration (t = 8.3 msec)

Forward Peak Gate Power

(Pulse Width ≤ 1.0 msec, T

Forward Average Gate Power

(t = 8.3 msec, T

Forward Peak Gate Current

(Pulse Width ≤ 1.0 msec, T

Operating Junction Temperature Range

Storage Temperature Range

Designed for high volume, low cost, industrial and consumer

Small Size

Passivated Die for Reliability and Uniformity

Low Level Triggering and Holding Characteristics

Available in Surface Mount Lead Form − Case 369C

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings:

Pb−Free Packages are Available

for zero or negative gate voltage; positive gate voltage shall not be applied

concurrent with negative potential on the anode. Blocking voltages shall not

be tested with a constant current source such that the voltage ratings of the

device are exceeded.

DRM

, V

RRM

= −40 to 125°C, Sine Wave,

for all types can be applied on a continuous basis. Ratings apply

Rating

= 105°C)

Machine Model, C u 400 V

Human Body Model, 3B u 8000 V

MCR8DCM

MCR8DCN

= 25°C unless otherwise noted)

= 105°C)

Preferred Device

= 105°C)

= 125°C)

Symbol

T(RMS)

T(AV)

G(AV)

DRM,

TSM

RRM

stg

−40 to 125

−40 to 150

Value

600

800

8.0

5.1

5.0

0.5

2.0

Unit

°C

sec

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

CR8DCx

ORDERING INFORMATION

8 AMPERES RMS

600 − 800 VOLTS

MARKING DIAGRAM

http://onsemi.com

PIN ASSIGNMENT

1 2

CASE 369C

= Year

= Work Week

= Device Code

= Pb−Free Package

STYLE 4

SCRs

DPAK

8DCxG

x= M or N

YWW

Publication Order Number:

Cathode

Anode

Gate

MCR8DCM/D

Related parts for MCR8DCNT4G

MCR8DCNT4G Summary of contents

Page 1

MCR8DCM, MCR8DCN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features • Small Size • Passivated Die for Reliability ...

Page 2

... Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. ORDERING INFORMATION Device MCR8DCMT4 MCR8DCMT4G MCR8DCNT4 MCR8DCNT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MCR8DCM, MCR8DCN 2 25° ...

Page 3

Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On State Voltage ...

Page 4

T , JUNCTION TEMPERATURE (°C) J Figure 5. Typical Gate Trigger Current versus Junction Temperature 100 10 1.0 −40 −25 −10 5 JUNCTION ...

Page 5

... G 0.13 (0.005) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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