MCR8DCNT4G ON Semiconductor, MCR8DCNT4G Datasheet - Page 4

• Manufacturer Part Number: MCR8DCNT4G
• Description: THYRISTOR SCR 8A 800V DPAK-4
• Manufacturer: ON Semiconductor

Specifications of MCR8DCNT4G

• Scr Type: Standard Recovery
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1V
• Voltage - On State (vtm) (max): 1.8V
• Current - On State (it (av)) (max): 5.1A
• Current - On State (it (rms)) (max): 8A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 30mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 80A @ 60Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 8A
• Breakover Current Ibo Max: 80 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 30 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR8DCNT4G; MCR8DCNT4GOSTR

100
1.0
100
10
1.0
10
−40
−40
Figure 5. Typical Gate Trigger Current versus
−25
−25
Figure 7. Typical Holding Current versus
−10
−10
T
T
5.0
J
5.0
J
, JUNCTION TEMPERATURE (°C)
Junction Temperature
, JUNCTION TEMPERATURE (°C)
Junction Temperature
20
20
35
35
1000
50
50
100
65
10
65
Figure 9. Exponential Static dv/dt versus
80
80
R
MCR8DCM, MCR8DCN
GK
95
95
, GATE−CATHODE RESISTANCE (OHMS)
Gate−Cathode Resistance
http://onsemi.com
110
110
100
125
125
4
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
100
1.0
10
−40
−40
1000
Figure 6. Typical Gate Trigger Voltage versus
−25
−25
Figure 8. Typical Latching Current versus
−10
−10
V
T
J
D
= 125°C
= 800 V
T
T
5.0
J
5.0
J
, JUNCTION TEMPERATURE (°C)
Junction Temperature
Junction Temperature
, JUNCTION TEMPERATURE (°C)
20
20
10 K
35
35
50
50
65
65
80
80
95
95
110
110
125
125