MCR12LMG ON Semiconductor, MCR12LMG Datasheet

MCR12LMG

Manufacturer Part Number

MCR12LMG

Description

THYRISTOR SCR 10A 600V TO220AB

Manufacturer

ON Semiconductor

Type

SCRr

Datasheet

1.MCR12LDG.pdf (5 pages)

Specifications of MCR12LMG

Scr Type

Standard Recovery

Voltage - Off State

600V

Voltage - Gate Trigger (vgt) (max)

800mV

Voltage - On State (vtm) (max)

2.2V

Current - On State (it (av)) (max)

7.6A

Current - On State (it (rms)) (max)

12A

Current - Gate Trigger (igt) (max)

8mA

Current - Hold (ih) (max)

20mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

100A @ 60Hz

Operating Temperature

-40°C ~ 125°C

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Current - On State (it (rms) (max)

12A

Repetitive Peak Off-state Volt

600V

Off-state Voltage

600V

Hold Current

20mA

Gate Trigger Current (max)

8mA

Gate Trigger Voltage (max)

800mV

Package Type

TO-220AB

Peak Repeat Off Current

10uA

Peak Surge On-state Current (max)

100A

On State Voltage(max)

2.2@24AV

Mounting

Through Hole

Pin Count

3 +Tab

Operating Temp Range

-40C to 125C

Operating Temperature Classification

Automotive

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR12LMG

Manufacturer:

ON Semiconductor

Quantity:

135

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR12LMG

Manufacturer:

ON Semiconductor

Quantity:

800

Current page: 1 of 5
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MCR12LD, MCR12LM,

MCR12LN

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

motor controls, heating controls, and power supplies; or wherever

half−wave, silicon gate−controlled devices are needed.

Features

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

October, 2008 − Rev. 3

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Peak Repetitive Off−State Voltage (Note 1)

50 to 60 Hz, Gate Open)

On-State RMS Current

(180 Conduction Angles; T

Average On-State Current

(180 Conduction Angles; T

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T

Circuit Fusing Consideration (t = 8.3 ms)

Forward Peak Gate Power

(Pulse Width

Forward Average Gate Power

(t = 8.3 ms, T

Forward Peak Gate Current

(Pulse Width

Operating Junction Temperature Range

Storage Temperature Range

Designed primarily for half−wave ac control applications, such as

Ease of Design

Blocking Voltage to 800 Volts

On−State Current Rating of 12 Amperes RMS at 80 C

High Surge Current Capability − 100 Amperes

Rugged, Economical TO−220AB Package

Glass Passivated Junctions for Reliability and Uniformity

Minimum and Maximum Values of IGT, VGT and IH Specified for

High Immunity to dv/dt − 100 V/msec Minimum at 125 C

Pb−Free Packages are Available*

Semiconductor Components Industries, LLC, 2008

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings

of the devices are exceeded.

DRM

= −40 to 125 C, Sine Wave,

and V

RRM

1.0 ms, T

= 80 C)

Rating

for all types can be applied on a continuous basis. Ratings

= 80 C)

= 25 C unless otherwise noted)

Preferred Device

= 80 C)

MCR12LM

MCR12LD

MCR12LN

= 125 C)

Symbol

T(RMS)

T(AV)

G(AV)

DRM,

TSM

RRM

stg

−40 to 125

−40 to 150

Value

400

600

800

100

7.6

5.0

0.5

2.0

Unit

sec

MCR12LD

MCR12LDG

MCR12LM

MCR12LMG

MCR12LN

MCR12LNG

Preferred devices are recommended choices for future use

and best overall value.

Device

ORDERING INFORMATION

400 thru 800 VOLTS

12 AMPERES RMS

AKA = Diode Polarity

http://onsemi.com

CASE 221A−09

PIN ASSIGNMENT

TO−220AB

= Assembly Location

= Year

= Work Week

= D, M, or N

= Pb−Free Package

STYLE 3

TO−220AB

(Pb−Free)

Package

SCRs

Publication Order Number:

Cathode

Anode

Gate

50 Units / Rail

MARKING

DIAGRAM

MCR12LxG

AY WW

Shipping

AKA

MCR12L/D

Related parts for MCR12LMG

MCR12LMG Summary of contents

Page 1

... W G(AV −40 to 125 C J MCR12LD T −40 to 150 C stg MCR12LDG MCR12LM MCR12LMG MCR12LN MCR12LNG Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com SCRs 12 AMPERES RMS 400 thru 800 VOLTS MARKING DIAGRAM AY WW MCR12LxG AKA TO− ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (V = Rated V and V ; Gate Open) ...

Page 3

Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Off State Forward Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On State Voltage ...

Page 4

CONDUCTION ANGLE 115 110 105 100 RMS ON‐STATE CURRENT (AMP) T(RMS) Figure 5. Typical RMS Current Derating 100 ...

Page 5

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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