MCR16NG ON Semiconductor, MCR16NG Datasheet

MCR16NG

Manufacturer Part Number

MCR16NG

Description

THYRISTOR SCR 16A 800V TO220AB

Manufacturer

ON Semiconductor

Datasheets

1.MCR16NG.pdf (5 pages)

2.MCR16NG.pdf (3 pages)

Specifications of MCR16NG

Scr Type

Standard Recovery

Voltage - Off State

800V

Voltage - Gate Trigger (vgt) (max)

Voltage - On State (vtm) (max)

1.7V

Current - On State (it (rms)) (max)

16A

Current - Gate Trigger (igt) (max)

20mA

Current - Hold (ih) (max)

40mA

Current - Off State (max)

10µA

Current - Non Rep. Surge 50, 60hz (itsm)

160A @ 60Hz

Operating Temperature

-40°C ~ 125°C

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Current - On State (it (rms) (max)

16A

Current Squared Time Rating

106

Current, Forward

16 A

Current, Surge

160 A

Package Type

TO-220AB

Primary Type

SCR

Resistance, Thermal, Junction To Case

1.5 °C/W

Temperature, Junction, Maximum

+125 °C

Temperature, Operating

-40 to +125 °C

Voltage, Forward

1.7 V

Voltage, Reverse

800 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - On State (it (av)) (max)

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

Other names

MCR16NGOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCR16NG

Manufacturer:

Quantity:

30 000

Current page: 1 of 5
Download datasheet (62Kb)

MCR16N

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

motor controls, heating controls, and power supplies; or wherever

half−wave, silicon gate−controlled devices are needed.

Features

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. V

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

December, 2005 − Rev. 4

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Peak Repetitive Off−State Voltage (Note 1)

50 to 60 Hz, Gate Open)

On-State RMS Current

(180 Conduction Angles; T

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T

Circuit Fusing Consideration (t = 8.3 ms)

Forward Peak Gate Power

(Pulse Width

Forward Average Gate Power

(t = 8.3 ms, T

Forward Peak Gate Current

(Pulse Width

Operating Junction Temperature Range

Storage Temperature Range

Designed primarily for half−wave ac control applications, such as

Ease of Design

Blocking Voltage to 800 Volts

On−State Current Rating of 16 Amperes RMS

High Surge Current Capability − 160 Amperes

Rugged Economical TO−220AB Package

Glass Passivated Junctions for Reliability and Uniformity

Minimum and Maximum Values of I

High Immunity to dv/dt − 100 V/msec Minimum at 125 C

Pb−Free Package is Available*

Semiconductor Components Industries, LLC, 2005

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings

of the devices are exceeded.

DRM

= −40 to 125 C, Sine Wave,

and V

RRM

1.0 ms, T

= 80 C)

1.0 ms, T

Rating

for all types can be applied on a continuous basis. Ratings

= 80 C)

= 25 C unless otherwise noted)

Preferred Device

= 80 C)

MCR16N

= 125 C)

Symbol

, V

T(RMS)

G(AV)

DRM,

TSM

RRM

stg

, and I

−40 to +125

−40 to +150

Value

800

160

106

5.0

0.5

2.0

Specified for

Unit

sec

MCR16N

MCR16NG

Preferred devices are recommended choices for future use

and best overall value.

Device

ORDERING INFORMATION

16 AMPERES RMS

AKA = Diode Polarity

http://onsemi.com

PIN ASSIGNMENT

CASE 221A−09

800 VOLTS

TO−220AB

(Pb−Free)

= Assembly Location

= Year

= Work Week

= Pb−Free Package

TO−220AB

Package

STYLE 3

SCRs

Publication Order Number:

Cathode

Anode

Gate

MARKING

DIAGRAM

50 Units / Rail

MCR16NG

AY WW

Shipping

AKA

MCR16/D

Related parts for MCR16NG

MCR16NG Summary of contents

Page 1

... MCR16N MCR16NG Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com SCRs 16 AMPERES RMS 800 VOLTS MARKING DIAGRAM AY WW MCR16NG AKA TO−220AB 1 CASE 221A− STYLE Assembly Location Y = Year WW = Work Week G = Pb−Free Package AKA = Diode Polarity ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (V = Rated Gate Open) ...

Page 3

CONDUCTION ANGLE 110 100 ITRMS ON−STATE CURRENT (AMPS) T(RMS) Figure 1. Typical RMS Current Derating 100 Typical @ ...

Page 4

T , JUNCTION TEMPERATURE ( C) J Figure 6. Typical Latching Current versus Junction Temperature 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −40 −25 − ...

Page 5

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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