EMZ1DXV6T5G ON Semiconductor, EMZ1DXV6T5G Datasheet

EMZ1DXV6T5G

Manufacturer Part Number

EMZ1DXV6T5G

Description

TRANS NPN GP/PNP DUAL SOT-563

Manufacturer

ON Semiconductor

Datasheet

1.EMZ1DXV6T5G.pdf (5 pages)

Specifications of EMZ1DXV6T5G

Transistor Type

NPN, PNP

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

60V

Vce Saturation (max) @ Ib, Ic

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Dc Current Gain (hfe) (min) @ Ic, Vce

120 @ 1mA, 6V

Power - Max

500mW

Frequency - Transition

180MHz, 140MHz

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

EMZ1DXV6T5G

Manufacturer:

Quantity:

30 000

Current page: 1 of 5
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EMZ1DXV6T1,

EMZ1DXV6T5

Dual General Purpose

Transistors

NPN/PNP Dual (Complementary)

applications. It is housed in the SOT−563 which is designed for low

power surface mount applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad.

April, 2006 − Rev. 1

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Collector −Emitter Voltage

Collector −Base Voltage

Emitter −Base Voltage

Collector Current − Continuous

Total Device Dissipation

Thermal Resistance,

Total Device Dissipation

Thermal Resistance,

Junction and Storage

This transistor is designed for general purpose amplifier

Lead−Free Solder Plating

Low V

These are Pb−Free Devices

Junction-to-Ambient

Temperature Range

Derate above 25°C

(Both Junctions Heated)

(One Junction Heated)

= 25°C

CE(SAT)

Characteristic

Rating

, t0.5 V

Symbol

CEO

CBO

, T

EBO

qJA

stg

357 (Note 1)

500 (Note 1)

−55 to +150

2.9 (Note 1)

4.0 (Note 1)

(Note 1)

Value

−100

−6.0

Max

−60

−50

350

250

mW/°C

mAdc

°C/W

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

(Note: Microdot may be in either location)

ORDERING INFORMATION

(3)

(4)

3Z = Specific Device Code

MARKING DIAGRAM

http://onsemi.com

= Month Code

= Pb−Free Package

CASE 463A

SOT−563

STYLE 1

3Z M G

(5)

Publication Order Number:

(2)

EMZ1DXV6/D

(1)

(6)

Related parts for EMZ1DXV6T5G

EMZ1DXV6T5G Summary of contents

Page 1

EMZ1DXV6T1, EMZ1DXV6T5 Dual General Purpose Transistors NPN/PNP Dual (Complementary) This transistor is designed for general purpose amplifier applications housed in the SOT−563 which is designed for low power surface mount applications. Features • Lead−Free Solder Plating • , ...

Page 2

... Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. ORDERING INFORMATION Device EMZ1DXV6T1 EMZ1DXV6T1G EMZ1DXV6T5 EMZ1DXV6T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. EMZ1DXV6T1, EMZ1DXV6T5 (T = 25° ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS − Q1, PNP T = 25°C A 120 COLLECTOR VOLTAGE (V) CE Figure 1. I − 1.5 1 0.5 0 0.01 0.1 1 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS − Q2, NPN 25° COLLECTOR VOLTAGE (V) CE Figure 1. I − 1.5 1 0.5 0 0.01 0.1 ...

Page 5

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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