UMF5NTR Rohm Semiconductor, UMF5NTR Datasheet

TRANS DUAL PNP 12V 500MA SOT-363

UMF5NTR

Manufacturer Part Number
UMF5NTR
Description
TRANS DUAL PNP 12V 500MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheets

Specifications of UMF5NTR

Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (ic) (max)
100mA, 500mA
Voltage - Collector Emitter Breakdown (max)
50V, 12V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
68 @ 5mA, 5V / 270 @ 10mA, 2V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz, 260MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
NPN / PNP
Collector Emitter Voltage V(br)ceo
-12V
Gain Bandwidth Ft Typ
260MHz
Power Dissipation Pd
150mW
Dc Collector Current
-500mA
Operating
RoHS Compliant
Dc Current Gain Hfe
270
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
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Transistors
Power management (dual transistors)
UMF5N
2SA2018 and DTC144EE are housed independently in a UMT package.
Power management circuit
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Silicon epitaxial planar transistor
Basic ordering unit (pieces)
Features
Structure
Equivalent circuits
Packaging specifications
Application
DTr2
(3)
(4)
R
Package
Marking
2
Code
R1=47kΩ
R2=47kΩ
Type
R
1
(5)
(2)
(6)
(1)
Tr1
UMF5N
UMT6
3000
TR
F5
Dimensions (Units : mm)
UMT6
Each lead has same dimensions
Rev.A
UMF5N
1/4

Related parts for UMF5NTR

UMF5NTR Summary of contents

Page 1

Transistors Power management (dual transistors) UMF5N 2SA2018 and DTC144EE are housed independently in a UMT package. Application Power management circuit Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. Structure ...

Page 2

Transistors Absolute maximum ratings (Ta=25°C) Tr1 Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO Emitter-base voltage V EBO I C Collector current Power dissipation C Junction temperature Tj Range of storage temperature Tstg ∗1 Single ...

Page 3

Transistors Electrical characteristic curves Tr1 1000 V =2V CE Pulsed 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 (V) BASE TO EMITTER VOLTAGE : V BE Fig.1 Grounded emitter propagation characteristics 1000 = ...

Page 4

Transistors DTr2 100 =0. Ta=−40°C 25°C 5 100° 500m 200m 100m 100µ 200µ 500µ 10m 20m 50m 100m (A) OUTPUT CURRENT : I O Fig.9 Input voltage vs. output current ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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