UMF5NTR Rohm Semiconductor, UMF5NTR Datasheet - Page 2

• Manufacturer Part Number: UMF5NTR
• Description: TRANS DUAL PNP 12V 500MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMF5NTR

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 12V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz, 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: -12V
• Gain Bandwidth Ft Typ: 260MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -500mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 270
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
Tr1
DTr2
Tr1
DTr2
∗1 Characteristics of built-in transistor.
∗2 120mW per element must not be exceeded.
∗1 Single pulse P
∗2 120mW per element must not be exceeded.
∗Characteristics of built-in transistor.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Collector-base breakdown voltage
Transition frequency
Transition frequency
Electrical characteristics (Ta=25°C)
Absolute maximum ratings (Ta=25°C)
Each terminal mounted on a recommended land.
Each terminal mounted on a recommended land.
Parameter
Parameter
W
Parameter
Parameter
=1ms
Symbol
Symbol
V
V
V
Tstg
Tstg
V
I
V
P
P
Tj
CBO
CEO
EBO
I
CP
I
Tj
I
C
CC
C
O
IN
C
C
Symbol
Symbol
150(TOTAL)
150(TOTAL)
V
BV
BV
BV
−55
R
V
−55~+150
V
V
I
−10
Cob
I
I
CE(sat)
h
O(off)
CBO
EBO
O(on)
R
2
G
f
I(off)
I(on)
f
I
FE
/R
Limits
CEO
CBO
EBO
T
T
Limits
I
−500
1
−1.0
I
−15
−12
150
100
150
−6
to
50
30
1
to
+150
+40
Min.
Min.
32.9
−12
−15
270
3.0
0.8
−6
68
−
−
−
−
−
−
−
−
−
−
Unit
mW
Unit
mW
mA
mA
mA
°C
°C
°C
°C
V
V
V
A
V
V
∗1
∗2
∗1
∗2
−100
Typ.
Typ.
260
100
250
6.5
1.0
47
−
−
−
−
−
−
−
−
−
−
−
−100
−100
−250
Max.
Max.
61.1
680
300
180
500
0.5
1.2
−
−
−
−
−
−
−
−
MHz
MHz
Unit
Unit
mV
mV
nA
nA
pF
µA
nA
kΩ
V
V
V
V
V
−
−
−
I
I
I
V
V
I
V
V
V
V
V
V
V
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
CC
O
O
I
CC
O
CE
=−10µA
=−1mA
=−10µA
=−200mA, I
=5V
=0.3V, I
=10mA, I
=5V, I
=−6V
=−15V
=−2V, I
=−2V, I
=−10V, I
=5V, I
=50V, V
=10V, I
O
O
=5mA
O
C
E
=100µA
E
Conditions
Conditions
=2mA
=−10mA
=10mA, f=100MHz
I
I
=−5mA, f=100MHz
E
=0.5mA
=0V
=0mA, f=1MHz
B
=−10mA
Rev.A
−
−
UMF5N
2/4
∗