MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 87

• Manufacturer Part Number: MT47H64M8CF-25E IT:G
• Description: 64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
• Manufacturer: Micron Technology Inc

Initialization
Figure 41: DDR2 Power-Up and Initialization
DDR2 SDRAM must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in unde-
fined operation. Figure 41 illustrates, and the notes outline, the sequence required for power-up and initialization.
Command
Address
DQS
DM
DQ
V
V
V
ODT
V
V
CK#
CKE
DDQ
DDL
R
TT
CK
REF
DD
15
16
15
15
tt
1
low level 2
LVCMOS
High-Z
High-Z
High-Z
t
VTD 1
T0
t CL
V
clock (CK, CK#)
low level
T = 200μs (MIN) 3
Power-up:
SSTL_18
DD
t CK
and stable
t CL
2
NOP 3
Ta0
T = 400ns (MIN) 4
A10 = 1
Tb0
PRE
t RPA
EMR(2)
LM 5
Code
Tc0
t MRD
EMR(3)
Code
LM 6
Td0
t MRD
Code
LM 7
EMR
Te0
t MRD
DLL RESET
MR with
Code
LM 8
Tf0
t MRD
A10 = 1
PRE 9
Tg0
t RPA
200 cycles of CK are required before a READ command can be issued
REF 10
Th0
t RFC
REF 10
Ti0
t RFC
MR without
DLL RESET
LM 11
Code
Tj0
t MRD
OCD default
EMR with
LM 12
Code
Tk0
Indicates a Break in
Time Scale
t MRD
EMR with
OCD exit
LM 13
Code
Tl0
t MRD
operation
Don’t care
Normal
Valid 14
Valid
Tm0