UMF4NTR Rohm Semiconductor, UMF4NTR Datasheet

TRANS DUAL PNP 12V 500MA SOT-363

UMF4NTR

Manufacturer Part Number
UMF4NTR
Description
TRANS DUAL PNP 12V 500MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of UMF4NTR

Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (ic) (max)
100mA, 500mA
Voltage - Collector Emitter Breakdown (max)
50V, 12V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 20mA, 5V / 270 @ 10mA, 2V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz, 260MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UMF4NTR
Manufacturer:
AD
Quantity:
421
Transistors
Power management (dual transistors)
UMF4N
2SA2018 and DTC123EE are housed independently in a UMT package.
! ! ! ! Application
Power management circuit
! ! ! ! Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
! ! ! ! Structure
Silicon epitaxial planar transistor
! ! ! ! Equivalent circuits
! ! ! ! Package, marking, and packaging specifications
Basic ordering unit(pieces)
DTr2
(3)
(4)
Package
R
Marking
Code
Type
2
R
R
1
2
=2.2kΩ
=2.2kΩ
R
1
(5)
(2)
(1)
(6)
Tr1
UMF4N
UMT6
3000
TR
F4
! ! ! ! External dimensions (Units : mm)
ROHM : UMT6
EIAJ : SC-88
0.1Min.
1.25
2.1
Each lead has same dimensions
UMF4N
1/4

Related parts for UMF4NTR

UMF4NTR Summary of contents

Page 1

Transistors Power management (dual transistors) UMF4N 2SA2018 and DTC123EE are housed independently in a UMT package Application Power management circuit ! ! ! ! Features 1) Power switching circuit in a single package. 2) Mounting cost ...

Page 2

Transistors ! ! ! ! Absolute maximum ratings (Ta=25°C) Tr1 Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO Emitter-base voltage V EBO I C Collector current I CP Power dissipation P C Junction temperature Tj Range of storage ...

Page 3

Transistors ! ! ! ! Electrical characteristic curves Tr1 1000 V =2V CE Pulsed 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 (V) BASE TO EMITTER VOLTAGE : V BE Fig.1 Grounded emitter propagation characteristics 1000 =20 ...

Page 4

Transistors DTr2 100 V =0. Ta=−40°C 5 25°C 100° 500m 200m 100m 100µ 200µ 500µ 10m 20m 50m 100m (A) OUTPUT CURRENT : I O Fig.9 Input voltage vs. output current ...

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