UMF4NTR Rohm Semiconductor, UMF4NTR Datasheet - Page 2

• Manufacturer Part Number: UMF4NTR
• Description: TRANS DUAL PNP 12V 500MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMF4NTR

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 12V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 20mA, 5V / 270 @ 10mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz, 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
! ! ! ! Absolute maximum ratings (Ta=25°C)
Tr1
DTr2
! ! ! ! Electrical characteristics (Ta=25°C)
Tr1
DTr2
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
∗1 Single pulse P
∗2 120mW per element must not be exceeded.
∗ Characteristics of built-in transistor.
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Collector-base breakdown voltage
Transition frequency
Transition frequency
Each terminal mounted on a recommended land.
Parameter
Parameter
W
Parameter
Parameter
=1ms
Symbol
Symbol
V
V
V
Tstg
Tstg
V
I
P
V
P
CBO
CEO
I
Tj
EBO
CP
I
Tj
I
C
CC
O
C
C
IN
C
Symbol
Symbol
150(TOTAL)
150(TOTAL)
V
BV
BV
BV
R
V
−55~+150
Cob
−55~+150
I
V
V
I
CE(sat)
I
h
−10~+20
CBO
EBO
O(off)
O(on)
R
f
G
2
I(off)
I(on)
f
FE
CEO
CBO
EBO
T
I
Limits
/R
Limits
T
−500
I
−1.0
1
I
−15
−12
150
100
100
150
−6
50
1
Min.
−12
−15
270
Min.
1.54
−6
3.0
0.8
20
−
−
−
−
−
−
−
−
−
−
Unit
mW
mA
Unit
mW
mA
mA
°C
°C
°C
°C
V
V
V
A
V
V
∗1
∗2
−100
∗1
∗2
Typ.
260
Typ.
6.5
100
250
2.2
1.0
−
−
−
−
−
−
−
−
−
−
−
Max.
−100
−100
−250
680
Max.
2.86
300
0.5
3.8
0.5
1.2
−
−
−
−
−
−
−
−
MHz
Unit
mV
MHz
nA
nA
Unit
pF
mV
mA
V
V
µA
kΩ
V
−
V
V
−
−
I
I
I
V
V
I
V
V
V
C
C
E
C
V
V
V
V
V
V
V
CB
EB
CE
CE
CB
=−1mA
=−10µA
=−10µA
=−200mA, I
CC
O
O
I
CC
O
CE
=5V
=0.3V, I
=10mA, I
=5V, I
=−6V
=−15V
=−2V, I
=−2V, I
=−10V, I
=5V, I
=50V, V
=10V, I
O
Conditions
O
=20mA
C
E
O
=100µA
E
=10mA, f=100MHz
=−10mA
E
Conditions
=20mA
I
I
=−5mA, f=100MHz
=0mA, f=1MHz
=0.5mA
=0V
B
=−10mA
−
−
UMF4N
∗
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