NSBC115TPDP6T5G ON Semiconductor, NSBC115TPDP6T5G Datasheet

TRANS BRT DUAL COMPL SOT-963

NSBC115TPDP6T5G

Manufacturer Part Number
NSBC115TPDP6T5G
Description
TRANS BRT DUAL COMPL SOT-963
Manufacturer
ON Semiconductor
Datasheet
1.NSBC114EPDP6T5G.pdf (7 pages)

Specifications of NSBC115TPDP6T5G

Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
100K
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
339mW
Mounting Type
Surface Mount
Package / Case
SOT-963
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
100kohm
Rf Transistor Case
SOT-963
No. Of Pins
6
Filter Terminals
SMD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Resistor - Emitter Base (r2) (ohms)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NSBC115TPDP6T5G
Manufacturer:
ON Semiconductor
Quantity:
5 150
NSBC114EPDP6T5G Series
Dual Digital Transistors
(BRT)
Complementary Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EPDP6T5G
series, two complementary BRT devices are housed in the SOT−963
package which is ideal for low power surface mount applications
where board space is at a premium.
Features
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
and Q
© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 1
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
The BRT (Bias Resistor Transistor) contains a single transistor with
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 4 mm, 8000 Units Tape and Reel
These are Pb−Free Devices
These are Halide−Free Devices
2
, − minus sign for Q
Rating
(T
1
A
(PNP) omitted)
= 25°C unless otherwise noted, common for Q
Preferred Devices
Symbol
V
V
CBO
CEO
I
C
Value
100
50
50
1
mAdc
Unit
Vdc
Vdc
1
†For information on tape and reel specifications,
See specific marking information in the device marking table
on page 2 of this data sheet.
NSBC114EPDP6T5G SOT−963
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CASE 527AD
DEVICE MARKING INFORMATION
Device
SOT−963
X
M
G
ORDERING INFORMATION
(3)
(4)
Q
1
http://onsemi.com
R
= Specific Device Code
= Date Code
= Pb−Free Package
2
(5)
R
(Pb−Free)
Package
1
Publication Order Number:
R
(2)
1
R
NSBC114EPDP6/D
2
MARKING
DIAGRAM
1
Tape & Reel
Shipping
Q
(1)
(6)
XM
2
8000 /
†

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NSBC115TPDP6T5G Summary of contents

Page 1

NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor ...

Page 2

... FR−4 @ 100 oz. copper traces, still air FR−4 @ 500 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. DEVICE MARKING AND RESISTOR VALUES Device NSBC114EPDP6T5G NSBC124EPDP6T5G NSBC144EPDP6T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC123TPDP6T5G NSBC143EPDP6T5G NSBC143ZPDP6T5G NSBC144WPDP6T5G NSBC123JPDP6T5G Symbol qJA P ...

Page 3

... C B (BR)CEO NSBC114EPDP6T5G h FE NSBC124EPDP6T5G NSBC144EPDP5T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC123TPDP6T5G NSBC143EPDP6T5G NSBC143ZPDP6T5G NSBC144WPDP6T5G NSBC123JPDP6T5G V CE(sat) NSBC114EPDP6T5G NSBC124EPDP6T5G NSBC144EPDP6T5G NSBC114YPDP6T5G NSBC144WPDP6T5G NSBC123JPDP6T5G NSBC115TPDP6T5G NSBC143EPDP6T5G NSBC143ZPDP6T5G NSBC123TPDP6T5G V OL NSBC123JPDP6T5G NSBC144WPDP6T5G V OH NSBC123JPDP6T5G NSBC143EPDP6T5G http://onsemi.com 3 Min Typ Max Unit − − 100 nAdc − ...

Page 4

... Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% and Q , − minus sign for Q (PNP) omitted Symbol NSBC114EPDP6T5G R1 NSBC124EPDP6T5G NSBC144EPDP5T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC123TPDP6T5G NSBC143EPDP6T5G NSBC143ZPDP6T5G NSBC144WPDP6T5G NSBC123JPDP6T5G NSBC114EPDP6T5G R1/R2 NSBC124EPDP6T5G NSBC144EPDP5T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC123TPDP6T5G NSBC143EPDP6T5G NSBC143ZPDP6T5G NSBC144WPDP6T5G NSBC123JPDP6T5G http://onsemi.com 4 Min Typ Max Unit 7 15.4 22 28.6 32.9 47 61.1 7.0 10 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDP6 NPN TRANSISTOR 1 25° 150° −55° COLLECTOR CURRENT (mA) ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDP6 PNP TRANSISTOR 1 25° COLLECTOR CURRENT (mA) C Figure 6. V vs. I ...

Page 7

... C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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