NSBC115TPDP6T5G ON Semiconductor, NSBC115TPDP6T5G Datasheet - Page 3

• Manufacturer Part Number: NSBC115TPDP6T5G
• Description: TRANS BRT DUAL COMPL SOT-963
• Manufacturer: ON Semiconductor

Specifications of NSBC115TPDP6T5G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 339mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 100kohm
• Rf Transistor Case: SOT-963
• No. Of Pins: 6
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -

ELECTRICAL CHARACTERISTICS
(T
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current
(V
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 4) (I
DC Current Gain
(V
Collector-Emitter Saturation Voltage
(I
(I
Output Voltage (on)
(V
(V
(V
Output Voltage (off)
(V
(V
C
C
A
EB
CE
CC
CC
CC
CC
CC
= 10 mA, I
= 10 mA, I
= 25°C unless otherwise noted, common for Q
= 6.0 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
B
C
B
C
B
B
B
B
= 0.3 mA)
= 5.0 mA)
B
= 1 mA)
= 0)
= 2.5 V, R
= 4.0 V, R
= 3.5 V, R
= 0.5 V, R
= 0.25 V, R
NSBC143ZPDP6T5G/NSBC144WPDP6T5G
NSBC114EPDP6T5G/NSBC124EPDP6T5G
NSBC143EPDP6T5G/NSBC143ZPDP6T5G
NSBC114EPDP6T5G/NSBC124EPDP6T5G
NSBC114YPDP6T5G/NSBC123TPDP6T5G
NSBC144EPDP6T5G/NSBC115TPDP6T5G
NSBC123TPDP6T5G/NSBC115TPDP6T5G
TCharacteristic
L
L
L
L
NSBC144EPDP6T5G/NSBC114YPDP6T5
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
L
= 1.0 kW)
CB
CE
= 50 V, I
C
= 50 V, I
= 10 mA, I
E
= 0)
B
NSBC144WPDP6T5G
NSBC144WPDP6T5G
NSBC144WPDP6T5G
NSBC144WPDP6T5G
= 0)
C
NSBC124EPDP6T5G
NSBC144EPDP5T5G
NSBC143EPDP6T5G
NSBC124EPDP6T5G
NSBC144EPDP5T5G
NSBC143EPDP6T5G
NSBC124EPDP6T5G
NSBC144EPDP6T5G
NSBC143EPDP6T5G
NSBC143EPDP6T5G
NSBC114EPDP6T5G
NSBC114YPDP6T5G
NSBC123TPDP6T5G
NSBC143ZPDP6T5G
NSBC114EPDP6T5G
NSBC114YPDP6T5G
NSBC123TPDP6T5G
NSBC143ZPDP6T5G
NSBC114EPDP6T5G
NSBC114YPDP6T5G
NSBC143ZPDP6T5G
NSBC123TPDP6T5G
NSBC115TPDP6T5G
NSBC123JPDP6T5G
NSBC115TPDP6T5G
NSBC123JPDP6T5G
NSBC123JPDP6T5G
NSBC115TPDP6T5G
NSBC123JPDP6T5G
NSBC123JPDP6T5G
E
= 2.0 mA, I
1
= 0)
and Q
http://onsemi.com
2
, − minus sign for Q
B
= 0)
3
V
V
Symbol
V
(BR)CBO
(BR)CEO
CE(sat)
I
I
I
V
V
CBO
CEO
h
EBO
FE
OH
OL
1
(PNP) omitted)
Min
160
160
4.9
4.9
4.9
4.9
4.9
4.9
50
50
35
60
80
80
15
80
80
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
100
140
140
350
350
200
140
140
60
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.18
0.13
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
100
500
0.5
0.2
0.1
0.2
0.1
4.0
1.5
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc