NSBA144WDP6T5G ON Semiconductor, NSBA144WDP6T5G Datasheet

TRANS DUAL PBRT PNP SOT-963

NSBA144WDP6T5G

Manufacturer Part Number
NSBA144WDP6T5G
Description
TRANS DUAL PBRT PNP SOT-963
Manufacturer
ON Semiconductor
Datasheet

Specifications of NSBA144WDP6T5G

Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
408mW
Mounting Type
Surface Mount
Package / Case
SOT-963
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
NSBA114EDP6T5G Series
Dual Digital Transistors
(BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−963 package which is designed for low power surface mount
applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2008
October, 2008 − Rev. 5
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
This new series of digital transistors is designed to replace a single
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT−963 Package can be Soldered using Wave or Reflow.
Available in 4 mm, 8000 Unit Tape & Reel
These are Pb−Free Devices
These are Halide−Free Devices
Rating
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
V
V
CBO
CEO
I
C
Value
100
50
50
1
mAdc
Unit
Vdc
Vdc
†For information on tape and reel specifications,
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
NSBA114EDP6T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CASE 527AD
DEVICE MARKING INFORMATION
Device
SOT−963
X
M
G
ORDERING INFORMATION
(3)
(4)
Q
1
http://onsemi.com
R
= Specific Device Code
= Date Code
= Pb−Free Package
2
(5)
R
(Pb−Free)
SOT−963
Package
1
Publication Order Number:
R
(2)
1
R
NSBA114EDP6/D
2
MARKING
DIAGRAM
1
Tape & Reel
Shipping
Q
(1)
(6)
XM
2
8000 /

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NSBA144WDP6T5G Summary of contents

Page 1

NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor ...

Page 2

... L (90°) NSBA143EDP6T5G F (90°) NSBA143ZDP6T5G K (90°) NSBA123JDP6T5G P (90°) NSBA144WDP6T5G J (90°) NSBA114TDP6T5G T (180°) NSBA115TDP6T5G V (180°) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ...

Page 3

... NSBA124EDP6T5G NSBA144EDP6T5G NSBA114YDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G NSBA114TDP6T5G = 10 mA 0.3 mA CE(sat NSBA114TDP6T5G NSBA114EDP6T5G NSBA124EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144EDP6T5G NSBA144WDP6T5G NSBA115TDP6T5G = 1.0 kW http://onsemi.com 3 Min Typ Max Unit − − 100 nAdc − − 500 nAdc − − 0.5 mAdc − ...

Page 4

... Input Resistor Resistor Ratio NSBA114EDP6T5G/NSBA124EDP6T5G NSBA144EDP6T5G/NSBA143EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G/NSBA114TDP6T5G/ NSBA115TDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G (T = 25°C unless otherwise noted) (Continued) A Symbol NSBA114TDP6T5G R1 NSBA114EDP6T5G NSBA124EDP6T5G NSBA144EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G NSBA115TDP6T5G http://onsemi.com 4 Min Typ Max Unit 7 7 15.4 22 28.6 32.9 47 61.1 7 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − NSBA114EDP6T5G 1 25° COLLECTOR CURRENT (mA) C Figure 1. V vs. I CE(sat) 2.4 ...

Page 6

... C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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