NSBA144WDP6T5G ON Semiconductor, NSBA144WDP6T5G Datasheet - Page 3

• Manufacturer Part Number: NSBA144WDP6T5G
• Description: TRANS DUAL PBRT PNP SOT-963
• Manufacturer: ON Semiconductor

Specifications of NSBA144WDP6T5G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 408mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
Collector−Base Cutoff Current (V
Collector−Emitter Cutoff Current (V
Emitter−Base Cutoff Current
Collector−Base Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (Note 4)
DC Current Gain
Collector−Emitter Saturation Voltage (I
Output Voltage (on)
Output Voltage (off) (V
(V
(I
(V
NSBA114EDP6T5G/NSBA124EDP6T5G/NSBA144EDP6T5G
NSBA114YDP6T5G/NSBA123TDP6T5G
NSBA123JDP6T5G/NSBA144EDP6T5G
(I
NSBA143ZDP6T5G/NSBA143EDP6T5G/NSBA114TDP6T5G
(I
NSBA115TPD6T5G
(V
(V
(V
(V
NSBA114EDP6T5G/NSBA124EDP6T5G/NSBA144EDP6T5G
NSBA114YDP6T5G/NSBA143ZDP6T5G/NSBA123JDP6T5G
NSBA144WDP6T5G
(V
C
C
C
EB
CE
CC
CC
CC
CC
CC
= 2.0 mA, I
= 10 mA, I
= 10 mA, I
= 6.0 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
C
B
B
C
B
= 5.0 mA)
B
B
B
B
B
= 1 mA)
= 5 mA)
= 0)
= 0)
= 2.5 V, R
= 3.5 V, R
= 4.0 V, R
= 5.0 V, R
= 0.25 V, R
CC
NSBA123TDP6T5G/NSBA143EDP6T5G/
Characteristic
= 5.0 V, V
NSBA115TDP6T5G/NSBA123TDP6T5G
NSBA114TDP6T5G/NSBA115TDP6T5G
L
L
L
L
L
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
CB
CE
B
= 50 V, I
C
= 0.5 V, R
= 50 V, I
C
= 10 mA, I
= 10 mA, I
(T
A
= 25°C unless otherwise noted)
E
NSBA144WDP6T5G
NSBA144WDP6T5G
NSBA144WDP6T5G
NSBA124EDP6T5G
NSBA144EDP6T5G
NSBA123TDP6T5G
NSBA143EDP6T5G
NSBA143ZDP6T5G
NSBA124EDP6T5G
NSBA144EDP6T5G
NSBA143EDP6T5G
NSBA143ZDP6T5G
NSBA124EDP6T5G
NSBA123TDP6T5G
NSBA143EDP6T5G
NSBA143ZDP6T5G
NSBA144EDP6T5G
= 0)
NSBA114EDP6T5G
NSBA114YDP6T5G
NSBA114TDP6T5G
NSBA115TDP6T5G
NSBA114EDP6T5G
NSBA114YDP6T5G
NSBA114TDP6T5G
NSBA114TDP6T5G
NSBA114EDP6T5G
NSBA114YDP6T5G
NSBA115TDP6T5G
B
NSBA123JDP6T5G
NSBA123JDP6T5G
NSBA123JDP6T5G
L
= 0)
E
= 1.0 kW)
= 0)
E
= 0.3 mA)
http://onsemi.com
3
V
V
Symbol
V
(BR)CBO
(BR)CEO
I
I
I
CE(sat)
V
V
h
CBO
CEO
EBO
OH
FE
OL
Min
160
160
35
60
80
80
15
80
80
80
4.9
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
100
140
140
350
140
140
140
250
60
27
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.18
0.13
100
500
0.25
0.2
4.0
0.9
1.5
0.1
0.2
0.2
0.2
0.2
0.2
0.2
0.5
0.2
0.1
0.2
0.2
0.2
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc