FZT1151ATA Diodes Zetex, FZT1151ATA Datasheet - Page 2

• Manufacturer Part Number: FZT1151ATA
• Description: TRANS PNP -40V -3000MA SOT-223
• Manufacturer: Diodes Zetex

Specifications of FZT1151ATA

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250mA, 3A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 500mA, 2V
• Power - Max: 2.5W
• Frequency - Transition: 145MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 45V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 3A
• Dc Current Gain (min): 270
• Power Dissipation: 2.5W
• Frequency (max): 145MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FZT1151ATR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
FZT1151A
V
V
V
V
V
I
I
V
V
V
h
f
C
t
t
SYMBOL
CBO
EBO
CES
T
on
off
FE
(BR)CBO
CES
CEO
CEV
(BR)EBO
CE(sat)
BE(sat)
BE(on)
cb
MIN.
-45
-40
-40
-40
-5
270
250
180
100
amb
TYP.
-95
-90
-85
-90
-8.5
-0.3
-0.3
-0.3
-60
-120
-140
-170
-200
-985
-850
450
400
300
190
145
40
170
460
45
VALUE
= 25°C).
MAX.
-100
-100
-100
-90
-180
-220
-260
-300
-1100
-1000
800
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
2%.
CONDITIONS.
I
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
V
I
V
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
EB
CE
CB
CC
CC
=-100 A
=-100 A
=-0.1A, I
=-0.5A, I
=-1A, I
=-1.8A, I
=-3A, I
=-3A, I
=-10mA, V
=-0.5A, V
=-2A, V
=-3A, V
=-5A, V
=-50mA, V
=-2A, I
=-2A, I
=-100 A
=-10mA *
=-100 A, V
=-3A, V
=-4V
=-36V
=-10V, f=1MHz
=-30V
=-30V
=-32V
B
B
B
B
B
CE
CE
CE
=-20mA*
=-250mA*
=-250mA*
CE
=-20mA,
= 20mA,
B
B
B
CE
=-2V*
=-2V*
=-2V*
=-1.0mA*
=-5mA*
=-70mA*
=-2V*
CE
CE
=-2V*
EB
=-2V*
=-10V
=+1V