2SB1689T106 Rohm Semiconductor, 2SB1689T106 Datasheet

TRANS PNP 12V 1.5A SOT-323

2SB1689T106

Manufacturer Part Number
2SB1689T106
Description
TRANS PNP 12V 1.5A SOT-323
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SB1689T106

Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
200mV @ 25mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 200mA, 2V
Power - Max
200mW
Frequency - Transition
400MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-12V
Power Dissipation Pd
200mW
Dc Collector Current
-1.5A
Transistor Case Style
SOT-323
No. Of Pins
3
Svhc
No SVHC (18-Jun-2010)
Dc
RoHS Compliant
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 12 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 1.5 A
Maximum Dc Collector Current
- 3 A
Power Dissipation
200 mW
Maximum Operating Frequency
400 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
270
Gain Bandwidth Product Ft
400 MHz
Dc Current Gain Hfe
270
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SB1689T106
2SB1689T106TR
Transistors
Genera purpose amplification(−12V, −1.5A)
2SB1689
Application
Low frequency amplifier
Driver
Features
1) A collector current is large.
2) Collector saturation voltage is low.
≤ −200mV
V
CE(sat)
at I
= −500mA / I
= −25mA
C
B
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
V
CBO
Collector-emitter voltage
V
CEO
Emitter-base voltage
V
EBO
I
C
Collector current
I
CP
Power dissipation
P
C
Junction temperature
Tj
Range of storage temperature
Tstg
Single pulse, P
1ms
1
W
Each terminal mounted on a recommended land pattern
2
Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
External dimensions (Unit : mm)
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
Packaging specifications
Limits
Unit
15
V
Type
12
V
6
V
2SB1689
1.5
A
1
3
A
2
200
mW
150
C
55 to 150
C
Symbol
Min.
Typ.
Max.
BV
15
CBO
BV
12
CEO
BV
6
EBO
I
100
CBO
I
100
EBO
V
110
200
CE(sat)
h
270
680
FE
f
400
T
Cob
12
2SB1689
1.25
2.1
0.1Min.
Each terminal has same dimensions
Abbreviated symbol : EV
(1) Emitter
(2) Base
(3) Collector
Package
Taping
Code
T106
Basic ordering unit (pieces)
3000
Unit
Conditions
V
I
10 A
C
V
I
1mA
C
V
I
10 A
E
nA
V
15V
CB
nA
V
6V
EB
mV
I
500mA, I
25mA
C
B
V
2V, I
200mA
CE
C
MHz
V
2V, I
200mA, f 100MHz
CE
E
pF
V
10V, I
0A, f 1MHz
CB
E
1/2

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2SB1689T106 Summary of contents

Page 1

Transistors Genera purpose amplification(−12V, −1.5A) 2SB1689 Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. ≤ −200mV V CE(sat −500mA / I = −25mA C B Absolute maximum ...

Page 2

Transistors Electrical characteristic curves 1000 PULSED Ta 100 100 0.001 0.01 0 COLLECTOR CURRENT : Fig.1 DC current gain vs. collector current ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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