TRANS PNP 12V 1.5A SOT-323

2SB1689T106

Manufacturer Part Number2SB1689T106
DescriptionTRANS PNP 12V 1.5A SOT-323
ManufacturerRohm Semiconductor
2SB1689T106 datasheet
 


Specifications of 2SB1689T106

Transistor TypePNPCurrent - Collector (ic) (max)1.5A
Voltage - Collector Emitter Breakdown (max)12VVce Saturation (max) @ Ib, Ic200mV @ 25mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce270 @ 200mA, 2VPower - Max200mW
Frequency - Transition400MHzMounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323-3Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo-12VPower Dissipation Pd200mW
Dc Collector Current-1.5ATransistor Case StyleSOT-323
No. Of Pins3SvhcNo SVHC (18-Jun-2010)
DcRoHS CompliantConfigurationSingle
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max- 12 V
Emitter- Base Voltage Vebo- 5 VContinuous Collector Current- 1.5 A
Maximum Dc Collector Current- 3 APower Dissipation200 mW
Maximum Operating Frequency400 MHzMaximum Operating Temperature+ 150 C
Dc Collector/base Gain Hfe Min270Gain Bandwidth Product Ft400 MHz
Dc Current Gain Hfe270Rohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent - Collector Cutoff (max)-
Other names2SB1689T106
2SB1689T106TR
  
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Transistors
Genera purpose amplification(−12V, −1.5A)
2SB1689
Application
Low frequency amplifier
Driver
Features
1) A collector current is large.
2) Collector saturation voltage is low.
≤ −200mV
V
CE(sat)
at I
= −500mA / I
= −25mA
C
B
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
V
CBO
Collector-emitter voltage
V
CEO
Emitter-base voltage
V
EBO
I
C
Collector current
I
CP
Power dissipation
P
C
Junction temperature
Tj
Range of storage temperature
Tstg
Single pulse, P
1ms
1
W
Each terminal mounted on a recommended land pattern
2
Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
External dimensions (Unit : mm)
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
Packaging specifications
Limits
Unit
15
V
Type
12
V
6
V
2SB1689
1.5
A
1
3
A
2
200
mW
150
C
55 to 150
C
Symbol
Min.
Typ.
Max.
BV
15
CBO
BV
12
CEO
BV
6
EBO
I
100
CBO
I
100
EBO
V
110
200
CE(sat)
h
270
680
FE
f
400
T
Cob
12
2SB1689
1.25
2.1
0.1Min.
Each terminal has same dimensions
Abbreviated symbol : EV
(1) Emitter
(2) Base
(3) Collector
Package
Taping
Code
T106
Basic ordering unit (pieces)
3000
Unit
Conditions
V
I
10 A
C
V
I
1mA
C
V
I
10 A
E
nA
V
15V
CB
nA
V
6V
EB
mV
I
500mA, I
25mA
C
B
V
2V, I
200mA
CE
C
MHz
V
2V, I
200mA, f 100MHz
CE
E
pF
V
10V, I
0A, f 1MHz
CB
E
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2SB1689T106 Summary of contents

  • Page 1

    Transistors Genera purpose amplification(−12V, −1.5A) 2SB1689 Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. ≤ −200mV V CE(sat −500mA / I = −25mA C B Absolute maximum ...

  • Page 2

    Transistors Electrical characteristic curves 1000 PULSED Ta 100 100 0.001 0.01 0 COLLECTOR CURRENT : Fig.1 DC current gain vs. collector current ...

  • Page 3

    Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...