2SB1689T106 Rohm Semiconductor, 2SB1689T106 Datasheet - Page 2

• Manufacturer Part Number: 2SB1689T106
• Description: TRANS PNP 12V 1.5A SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of 2SB1689T106

• Transistor Type: PNP
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 25mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 270 @ 200mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 400MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -12V
• Power Dissipation Pd: 200mW
• Dc Collector Current: -1.5A
• Transistor Case Style: SOT-323
• No. Of Pins: 3
• Svhc: No SVHC (18-Jun-2010)
• Dc: RoHS Compliant
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 1.5 A
• Maximum Dc Collector Current: - 3 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 400 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 270
• Gain Bandwidth Product Ft: 400 MHz
• Dc Current Gain Hfe: 270
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SB1689T106; 2SB1689T106TR

Transistors
Electrical characteristic curves
0.001
1000
0.01
100
0.1
10
10
0.001
1
0
Fig.5 Grounded emitter propagation
BASE TO EMITTER VOLTAGE : V
Ta 100 C
COLLECTOR CURRENT : I
Fig.1 DC current gain vs.
25 C
40 C
characteristics
0.01
collector current
0.5
Ta 100 C
25 C
40 C
0.1
1
1
C
V
PULSED
(
V
CE
A)
PULSED
CE
BE
2V
2V
(V
10
)
1.5
0.001
0.01
Fig.2 Collector-emitter saturation voltage
Fig.3 Base-emitter saturation voltage
1000
0.1
0.001
100
1
10
0.001
Ta=100˚C
vs.collector current
vs.collector current
Fig.6 Gain bandwidth product
COLLECTOR CURRENT : I
25˚C
40˚C
EMITTER CURRENT : I
0.01
0.01
Ta= 40˚C
vs. emitter current
100˚C
25˚C
0.1
0.1
1
E
I
C
PULSED
1
(
C
A)
/I
(
Ta 25 C
V
f 100MHz
A)
B
CE
=20
2V
10
10
0.001
0.01
100
0.1
10
0.001
COLLECTOR TO BASE VOLTAGE : V
1
1
0.1
Fig.7 Collector output capacitance
Fig.4 Collector-emitter saturation
COLLECTOR CURRENT : I
I
C
/I
vs. collector-base voltage
Emitter input capacitance
vs.emitter-base voltage
voltage vs. collector current
B
0.01
20
10
50
1
Cib
Cob
0.1
2SB1689
10
C
1
(
Ta 25 C
Ta 25 C
I
f 1MHz
PULSED
A)
E
0mA
CB
(V
2/2
)
100
10