2SD1898T100R Rohm Semiconductor, 2SD1898T100R Datasheet - Page 2

• Manufacturer Part Number: 2SD1898T100R
• Description: TRANS NPN 80V 1A SOT-89
• Manufacturer: Rohm Semiconductor

Specifications of 2SD1898T100R

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 20mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 500mA, 3V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Bce Npn: Transistor Polarity
• Collector Emitter Voltage V(br)ceo: 80V
• Power Dissipation Pd: 500mW
• Dc Collector Current: 500mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-89
• No. Of: RoHS Compliant
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 0.5 W
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 82
• Gain Bandwidth Product Ft: 100 MHz
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SD1898T100R; 2SD1898T100RTR

Absolute maximum ratings (Ta=25C)
Electrical characteristics (Ta=25C)
∗ Measured using pulse current
Packaging specifications and h
h
∗1 Pw=20ms, duty=1 / 2
∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm
∗3 When mounted on a 40×40×0.7mm ceramic board.
○
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Type
c
2SD1898
2SD1733
2SD1768S
2SD1863
www.rohm.com
FE
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
2009 ROHM Co., Ltd. All rights reserved.
Item
values are classified as follows :
h
FE
Parameter
Parameter
120 to 270
h
QR
QR
QR
QR
2SD1863
2SD1733, 2SD1898
2SD1768S
FE
Q
2SD1898
2SD1733
2SD1768S
2SD1863
Package
Code
Basic ordering unit (pieces)
180 to 390
R
Symbol
V
V
V
Tstg
Symbol
BV
BV
BV
P
Tj
V
CBO
CEO
EBO
I
Cob
C
I
I
C
h
CBO
EBO
CE(sat)
FE
f
FE
CBO
CEO
EBO
T
∗
Min.
120
120
120
120
80
5
−
−
−
−
−
−55 to +150
Limits
2
120
150
or larger.
T100
1000
0.5
0.3
80
10
5
1
2
2
1
1
−
−
−
Typ.
0.15
100
20
−
−
−
−
−
−
−
−
2500
TL
Max.
−
−
−
390
390
390
0.4
W (Tc=25°C)
Taping
−
−
−
1
1
−
−
A (Pulse) ∗1
A (DC)
Unit
5000
°C
°C
2/3
W
W
W
W
W
V
V
V
TP
MHz
−
−
−
Unit
μA
μA
pF
V
V
V
V
−
−
−
∗3
∗2
2500
TV2
I
I
I
V
V
V
I
V
V
C
C
E
C
−
−
−
= 50μA
CB
EB
CE
CE
CB
= 50μA
= 1mA
/I
B
= 100V
= 4V
= 3V, I
= 10V, I
= 10V, I
= 500mA/20mA
C
= 0.5A
E
E
=− 50mA, f = 100MHz
= 0A, f = 1MHz
Conditions
2009.12 - Rev.C
Data Sheet