2SD1758TLQ Rohm Semiconductor, 2SD1758TLQ Datasheet - Page 2

• Manufacturer Part Number: 2SD1758TLQ
• Description: TRANS NPN 32V 2A SOT-428
• Manufacturer: Rohm Semiconductor

Specifications of 2SD1758TLQ

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 800mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 3V
• Power - Max: 10W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Bce Npn: Transistor Polarity
• Collector Emitter Voltage V(br)ceo: 32V
• Power Dissipation Pd: 1W
• Dc Collector Current: 2A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-428
• No. Of Pins: 3
• Transistor Polarity: NPN
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 2SD1758TLQ; 2SD1758TLQTR

Packaging specifications and h
h
Electrical characteristic curves
○
2SD1758 / 2SD1862
c
www.rohm.com
Type
2SD1758
2SD1862
FE
Fig.1 Grounded emitter propagation
2000
1000
Fig.7 Collector output capacitance vs.
500
200
100
500
200
100
Fig.4 Collector-emitter saturation
50
20
2010 ROHM Co., Ltd. All rights reserved.
50
20
10
1000
Item
values are classified as follows :
5
2
1
500
200
100
h
0
50
20
10
FE
BASE TO EMITTER VOLTAGE : V
5
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
0.2
characteristics
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
I
COLLECTOR CURRENT : I
voltage vs. collector current
C
/I
0.5
10 20
0.4
B
=50
120 to 270
20
10
0.6
h
QR
QR
1
FE
Q
0.8 1.0 1.2 1.4 1.6 1.8
Cob
50 100 200 500 1A 2A
Cib
2
Package
Code
Basic ordering
unit (pieces)
180 to 390
5
C
Ta=25°C
V
R
Ta=25°C
(mA)
10
CE
Ta=25°C
f = 1MHz
I
I
=3V
BE
E
C
=0A
=0A
: V
(V)
20
CB
EB
2.0
(V)
(V)
FE
2500
TL
−
Taping
2500
TV2
0.05
0.02
0.01
Fig.5 Collector-emitter saturation
0.5
0.2
0.1
−
0.5
0.4
0.3
0.2
0.1
0.5
0.2
0.1
COLLECTOR TO EMITTER VOLTAGE : V
2
1
0
5
2
1
COLLECTOR TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter output
0.1
0
3.0mA
Ta=25°C
T
∗Single
5
nonrepetitive
pulse
C
Fig.8 Safe operating area
=25°C
0.2
voltage vs. collector current
COLLECTOR CURRENT : I
10 20
0.4
characteristics
0.5
(2SD1758)
1
0.8
2/2
50 100 200 500 1A 2A
P
2
W
=100ms ∗
1.2
5
I
10
C
C
/I
Ta=25°C
1.6
(mA)
B
=10
2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
1.2mA
0.9mA
0.6mA
0.3mA
I
20
B
=0A
CE
CE
2.0
(V)
50
(V)
1000
Fig.6 Transition frequency vs. emitter
0.05
500
200
100
0.5
0.2
0.1
COLLECTOR TO EMITTER VOLTAGE : V
500
200
100
Fig.3 DC current gain vs. collector
50
20
3
2
1
50
20
−1
Ic Max Pulse
Ta=25°C
Single
nonrepetitive
pulse
Fig.9 Safe operating area
0.2
-2
current
Ic Max
5
current
COLLECTOR CURRENT : I
EMITTER CURRENT : I
10 20
0.5
−5 −10 −20
(2SD1862)
2010.04 - Rev.C
1
50 100 200
2
Data Sheet
−50 −100−200 −500 −1A
5
V
CE
E
10
(mA)
500 1A 2A
=3V
Ta=25°C
V
1V
C
CE
Ta=25°C
(mA)
20
=5V
CE
50
(V)