2SB1182TLR Rohm Semiconductor, 2SB1182TLR Datasheet - Page 3

• Manufacturer Part Number: 2SB1182TLR
• Description: TRANSISTOR PNP 32V 2A SOT-428
• Manufacturer: Rohm Semiconductor

Specifications of 2SB1182TLR

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 800mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 500mA, 3V
• Power - Max: 10W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 32 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 10000 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: - 2 A
• Dc Collector/base Gain Hfe Min: 180
• Maximum Operating Frequency: 100 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SB1182TLR; 2SB1182TLRTR

○
2SB1182 / 2SB1240
c
www.rohm.com
−0.05
−0.02
−0.01
−0.5
−0.2
−0.1
2010 ROHM Co., Ltd. All rights reserved.
−5
−2
−1
−0.1
COLLECTOR TO EMITTER VOLTAGE : V
Ta=25°C
∗Single
Fig.10 Safe operation area
I
DC
C Max
nonrepetitive
pulse
−0.2
. (Pulse)
−0.5
(2SB1182)
−1
−2
P
−5
W
=1ms
P
W
−10
=100ms
P
W
=500μs
−20
CE
−50
(V)
3/3
2010.04 - Rev.C
Data Sheet