2SD1733TLQ Rohm Semiconductor, 2SD1733TLQ Datasheet - Page 3

• Manufacturer Part Number: 2SD1733TLQ
• Description: TRANS NPN 80V 1A SOT-428
• Manufacturer: Rohm Semiconductor

Specifications of 2SD1733TLQ

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 20mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 3V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 10 W
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 100 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SD1733TLQ; 2SD1733TLQTR

Electrical characteristic curves
○
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
c
www.rohm.com
1000
500m
200m
100m
0.05
0.02
0.01
100
50m
20m
10m
2009 ROHM Co., Ltd. All rights reserved.
0.1
Fig.1 Grounded emitter propagation
2.0
1.0
0.5
0.2
0.1
10
5m
2m
1m
10
1
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1 0.2 0.5 1 2
0
Fig.4 Collector-emitter saturation
COLLECTOR TO EMITTER VOLTAGE : V
BASE TO EMITTER VOLTAGE : V
Ic Max (Pulse)
characteristics
COLLECTOR CURRENT : I
Fig.7 Safe operating area
voltage vs. collector current
I
C
/I
B
=20/1
10
(2SD1863)
10/1
5 10 20 50100
100
Ta=25°C
Single
non-repetitive
pulse
C
(
Ta=25°C
Ta=25°C
V
mA)
200
CE
BE
1000
=5V
(V)
500
CE
1000
(V)
500
200
100
500m
200m
100m
20
10
50
50m
20m
10m
5
2
5m
2m
1m
1
10
1.0
0.8
0.6
0.4
0.2
5
2
1
COLLECTOR TO EMITTER VOLTAGE : V
Fig.5 Gain bandwidth product vs.
0.1 0.2 0.5 1 2
0
COLLECTOR TO EMITTER VOLTAGE : V
0
2
Ic Max (Pulse)
EMITTER CURRENT : −I
Fig.2 Grounded emitter output
emitter current
Fig.8 Safe operating area
5
2
10
characteristics
(2SD1898)
4
20
3/3
5 10 20 50100
50 100 200 500 1000
6
E
(mA)
8
Ta=25°C
Single
non-repetitive
pulse
Ta=25°C
V
CE
200
6mA
=5V
Ta=25°C
2mA
5mA
I
10
1mA
B
4mA
=0mA
3mA
500
CE
1000
CE
(
V)
(
V)
1000
100
10
Fig.6 Collector output capacitance vs.
1
1000
0.1 0.2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
100
0
0
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR CURRENT : I
0.5
Fig.3 DC current gain vs.
1
10
2009.12 - Rev.C
collector current
2
Data Sheet
5
10
100
20
Ta=25°C
f=1MHz
I
Ic=0A
E
: V
=0A
C
CB
EB
(
Ta=25°C
mA)
50 100
(
(
V
1V
V)
V)
CE
1000
=3V