BC847BTT1G ON Semiconductor, BC847BTT1G Datasheet - Page 3

• Manufacturer Part Number: BC847BTT1G
• Description: TRANS NPN LP 100MA 45V SC75-3
• Manufacturer: ON Semiconductor

Specifications of BC847BTT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC847BTT1GOSTR

2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2
2.0
1.6
1.2
0.8
0.4
0
0.02
0.2
Figure 1. Normalized DC Current Gain
Figure 3. Collector Saturation Region
0.5
10 mA
I
C
=
1.0
20 mA
I
I
C
C
, COLLECTOR CURRENT (mAdc)
0.1
=
2.0
I
B
, BASE CURRENT (mA)
I
C
= 50 mA
5.0
10
BC847ATT1, BC847BTT1, BC847CTT1
1.0
T
A
20
I
C
= 25 C
= 100 mA
I
C
= 200 mA
V
T
A
50
CE
= 25 C
= 10 V
100
http://onsemi.com
10
200
20
3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
1.2
1.6
2.0
2.4
2.8
0
0.1
0.2
Figure 4. Base−Emitter Temperature Coefficient
T
A
−55 C to +125 C
= 25 C
Figure 2. “Saturation” and “On” Voltages
0.2
0.3
0.5
V
I
C
BE(sat)
I
0.7
C
, COLLECTOR CURRENT (mAdc)
, COLLECTOR CURRENT (mA)
1.0
1.0
@ I
V
CE(sat)
C
/I
2.0
B
= 10
3.0
V
@ I
BE(on)
C
5.0
/I
B
@ V
= 10
7.0
10
CE
10
= 10 V
20
30
50
70
100
100