NSS12200WT1G ON Semiconductor, NSS12200WT1G Datasheet

NSS12200WT1G

Manufacturer Part Number

NSS12200WT1G

Description

TRANSISTOR PNP 2A 12V SC-88

Manufacturer

ON Semiconductor

Datasheet

1.NSS12200WT1G.pdf (5 pages)

Specifications of NSS12200WT1G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

12V

Vce Saturation (max) @ Ib, Ic

290mV @ 20mA, 1A

Current - Collector Cutoff (max)

100nA

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 800mA, 1.5 V

Power - Max

450mW

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NSS12200WT1G

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS12200WT1G

Manufacturer:

ON Semiconductor

Quantity:

900

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS12200WT1G

Manufacturer:

Quantity:

30 000

Current page: 1 of 5
Download datasheet (129Kb)

NSS12200WT1G

12 V, 3 A, Low V

PNP Transistor

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Features

•

Benefits

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MAXIMUM RATINGS

October, 2009 − Rev. 1

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current − Continuous

Collector Current

Electrostatic Discharge

ON Semiconductor’s e

Typical application are DC−DC converters and power management

Compliant

High Specific Current and Power Capability Reduces Required PCB Area

High Current Capability (3 A)

High Power Handling (Up to 650 mW)

Low V

Small Size

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Reduced Parasitic Losses Increases Battery Life

CE(s)

Rating

(170 mV Typical @ 1 A)

− Peak

CE(sat)

= 25°C)

) and high current gain capability. These

PowerEdge family of low V

Symbol

ESD

CEO

CBO

EBO

CE(sat)

PowerEdge devices to be

Max

−5.0

−2.0

−3.0

−12

HBM Class 3

MM Class C

CE(sat)

Unit

Vdc

Adc

NSS12200WT1G

†For information on tape and reel specifications,

PNP LOW V

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

EQUIVALENT R

Device

ORDERING INFORMATION

BASE

V2 = Specific Device Code

M = Date Code

G = Pb−Free Package

DEVICE MARKING

http://onsemi.com

SC−88/SOT−363

12 VOLTS

3.0 AMPS

CE(sat)

CASE 419B

STYLE 20

COLLECTOR

(Pb−Free)

Package

SOT−363

EMITTER

1, 2, 5, 6

Publication Order Number:

DS(on)

TRANSISTOR

Tape & Reel

NSS12200W/D

163 mW

Shipping

3000 /

†

Related parts for NSS12200WT1G

NSS12200WT1G Summary of contents

Page 1

... V2 = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NSS12200WT1G SOT−363 3000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

THERMAL CHARACTERISTICS Characteristic Total Device Dissipation T = 25°C A Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation T = 25°C A Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead 6 Total Device Dissipation (Single Pulse < 10 ...

Page 3

A 800 mA 0 100 mA 500 BASE CURRENT (mA) B Figure 1. Collector Emitter Voltage vs. Base Current 400 125°C 300 25°C 200 100 T ...

Page 4

0. 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0 TIME (s) Figure 7. Normalized Thermal Response http://onsemi.com 4 ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords

nss12
nss12100xv6t1g
nss12100uw3tcg
NSS12200WT1G datasheet
NSS12200WT1G data sheet
NSS12200WT1G pdf datasheet
NSS12200WT1G component
NSS12200WT1G part
NSS12200WT1G distributor
NSS12200WT1G RoHS
NSS12200WT1G datasheet download