BCX17,215 NXP Semiconductors, BCX17,215 Datasheet

TRANS PNP 500MA 45V SOT23

BCX17,215

Manufacturer Part Number
BCX17,215
Description
TRANS PNP 500MA 45V SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCX17,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
620mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
250mW
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
250 mW
Maximum Operating Frequency
80 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1640-2
933209620215
BCX17 T/R
Product data sheet
Supersedes data of 1999 May 31
DATA SHEET
BCX17; BCX18
PNP general purpose transistors
DISCRETE SEMICONDUCTORS
2004 Jan 16

Related parts for BCX17,215

BCX17,215 Summary of contents

Page 1

DATA SHEET BCX17; BCX18 PNP general purpose transistors Product data sheet Supersedes data of 1999 May 31 DISCRETE SEMICONDUCTORS 2004 Jan 16 ...

Page 2

... NXP Semiconductors PNP general purpose transistors FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • Saturated switching and driver applications e.g. for industrial service • Thick and thin-film circuits. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCX19. ...

Page 3

... NXP Semiconductors PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BCX17 BCX18 V collector-emitter voltage CEO BCX17 BCX18 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors PNP general purpose transistors CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation voltage CEsat V base-emitter voltage BE C collector capacitance c f transition frequency T Note decreases by approximately −2 mV/°C with increasing temperature. ...

Page 5

... NXP Semiconductors PNP general purpose transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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