BCX17,215 NXP Semiconductors, BCX17,215 Datasheet - Page 3

TRANS PNP 500MA 45V SOT23

BCX17,215

Manufacturer Part Number
BCX17,215
Description
TRANS PNP 500MA 45V SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCX17,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
620mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
250mW
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
250 mW
Maximum Operating Frequency
80 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1640-2
933209620215
BCX17 T/R
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
BCX17
BCX18
BCX17
BCX18
PARAMETER
PARAMETER
open emitter
open base
open collector
T
3
amb
note 1
≤ 25 °C; note 1
CONDITIONS
CONDITIONS
−65
−65
MIN.
VALUE
BCX17; BCX18
500
−50
−30
−45
−25
−5
−500
−1
−200
250
+150
150
+150
Product data sheet
MAX.
UNIT
K/W
V
V
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT

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