2SC2411KT146R Rohm Semiconductor, 2SC2411KT146R Datasheet - Page 2

• Manufacturer Part Number: 2SC2411KT146R
• Description: TRANS NPN 32V 0.5A SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of 2SC2411KT146R

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 100mA, 3V
• Power - Max: 200mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 32 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 0.2 W
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 250 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SC2411KT146R; 2SC2411KT146RTR

Transistors
h
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
FE
Type
2SC2411K
Electrical characteristics (Ta = 25°C)
Packaging Specifications and h
Electrical characteristic curves
1000
Fig.1 Grounded emitter propagation
500
200
100
0.5
0.2
0.1
50
20
10
values are classified as follows:
Item
5
2
1
0.2
h
FE
V
BASE TO EMITTER VOLTAGE : V
CE
0.3
= 6V
characteristics
Ta = 100 °C
0.4
80 °C
25 °C
Parameter
120 to 270
h
QR
0.5
FE
Q
0.6
Package
Code
Basic ordering unit (pieces)
0.7
0.8
180 to 390
0.9
−25 °C
R
−55 °C
BE
1.0
( V)
1.1
FE
Symbol
V
BV
BV
BV
Cob
I
I
CE (sat)
h
CBO
EBO
f
FE
CBO
CEO
T
EBO
100
50
0
COLLECTOR TO EMITTER VOLTAGE : V
0
Fig.2
Ta = 25 °C
Min.
120
40
32
5
−
−
−
−
−
1
Grounded emitter output
characteristics ( Ι )
Taping
Typ.
250
T146
3000
6.5
−
−
−
−
−
−
−
2
Max.
390
0.6
−
−
−
1
1
−
−
3
MHz
I
Unit
4
B
µA
µA
pF
= 0A
V
V
V
V
−
CE
( V)
5
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CB
/I
= 100µA
= 1mA
= 100µA
B
= 4V
= 20V
= 3V, I
= 5V, I
= 10V, I
= 5 00mA/50mA
Fig.4 Collector-emitter saturation voltage
0.05
0.02
0.5
0.2
0.1
1
0.5
C
E
Ta = 25 °C
Ta
l
C
vs. collector current
E
= −20mA, f = 100MHz
= 100mA
/l
1
B
= 0A, f = 1MHz
= 10
COLLECTOR CURRENT : I
Conditions
2
5
10
Rev.A
2SC2411K
20
50 100
C
200
( mA)
500
2/3
1000