MJE182G ON Semiconductor, MJE182G Datasheet - Page 4

• Manufacturer Part Number: MJE182G
• Description: TRANS PWR NPN 3A 80V TO225AA
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJE182G

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.7V @ 600mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 100mA, 1V
• Power - Max: 12.5W
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 1.5 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 50
• Maximum Operating Frequency: 50 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 3 A
• Current, Gain: 12
• Frequency: 50 MHz
• Package Type: TO-225AA
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 10 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 1.7 V
• Voltage, Emitter To Base: 7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJE182GOS

a transistor − average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
10K
There are two limitations on the power handling ability of
0.05
0.02
0.01
500
300
200
100
5.0
2.0
1.0
0.5
0.2
0.1
5K
3K
2K
1K
50
30
20
10
10
0.01
1.0
NPN MJE181/182
PNP MJE171/172
0.02
V
2.0
t
f
CE
0.03 0.05
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
BONDING WIRE LIMITED
THERMALLY LIMITED @
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
T
T
RATED V
3.0
Figure 5. MJE171, MJE172
J
C
I
C
Figure 7. Turn−Off Time
= 150°C
= 25°C (SINGLE PULSE)
, COLLECTOR CURRENT (AMPS)
5.0
CEO
0.1
dc
0.2
10
0.3
t
s
ACTIVE−REGION SAFE OPERATING AREA
0.5
5.0 ms
20
MJE171
MJE172
100 ms
30
1
V
I
I
T
C
B1
J
CC
/I
2
= 25°C
B
= I
= 30 V
= 10
50
B2
C
3
500 ms
http://onsemi.com
− V
CE
100
5
4
10
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
Figure 4. At high case temperature, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100
0.05
0.02
0.01
J(pk)
20
70
50
30
10
5.0
2.0
1.0
0.5
0.2
0.1
The data of Figures 5 and 6 is based on T
10
1.0
0.5 0.7
t 150°C. T
2.0
V
1.0
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
BONDING WIRE LIMITED
THERMALLY LIMITED @
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
T
3.0
Figure 6. MJE181, MJE182
T
RATED V
J
V
C
= 150°C
R
Figure 8. Capacitance
= 25°C (SINGLE PULSE)
J(pk)
2.0
5.0 ms
, REVERSE VOLTAGE (VOLTS)
5.0
CEO
3.0
may be calculated from the data in
7.0
5.0
10
dc
7.0
C
ib
20
MJE181
MJE182
10
PNP MJE171/MJE172
NPN MJE181/MJE182
100 ms
C
J(pk)
30
ob
T
20
J
= 150°C; T
= 25°C
500 ms
50
30
70
100
50
C