MJE182G ON Semiconductor, MJE182G Datasheet - Page 5

• Manufacturer Part Number: MJE182G
• Description: TRANS PWR NPN 3A 80V TO225AA
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJE182G

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.7V @ 600mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 100mA, 1V
• Power - Max: 12.5W
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 1.5 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 50
• Maximum Operating Frequency: 50 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 3 A
• Current, Gain: 12
• Frequency: 50 MHz
• Package Type: TO-225AA
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 10 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 1.7 V
• Voltage, Emitter To Base: 7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJE182GOS

ORDERING INFORMATION
MJE170
MJE170G
MJE171
MJE171G
MJE172
MJE172G
MJE180
MJE180G
MJE181
MJE181G
MJE182
MJE182G
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
Device
http://onsemi.com
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−225
TO−225
TO−225
TO−225
TO−225
TO−225
TO−225
TO−225
TO−225
TO−225
TO−225
TO−225
5
500 Units / Box
Shipping