2N4920G ON Semiconductor, 2N4920G Datasheet

2N4920G

Manufacturer Part Number

2N4920G

Description

TRANS PNP GP 1A 80V TO225AA

Manufacturer

ON Semiconductor

Type

Medium Powerr

Datasheets

1.2N4920G.pdf (6 pages)

2.2N4918G.pdf (8 pages)

3.2N4918G.pdf (3 pages)

Specifications of 2N4920G

Transistor Type

PNP

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

600mV @ 100mA, 1A

Current - Collector Cutoff (max)

500µA

Dc Current Gain (hfe) (min) @ Ic, Vce

30 @ 500mA, 1V

Power - Max

30W

Frequency - Transition

3MHz

Mounting Type

Through Hole

Package / Case

TO-225-3

Transistor Polarity

PNP

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

80 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

3 A

Power Dissipation

30 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

3 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

3 MHz

Minimum Operating Temperature

- 65 C

Current, Collector

1 A

Current, Gain

Frequency

3 MHz

Package Type

TO-225

Polarity

PNP

Primary Type

Resistance, Thermal, Junction To Case

4.16 °C/W

Voltage, Breakdown, Collector To Emitter

80 V

Voltage, Collector To Base

80 V

Voltage, Collector To Emitter

80 V

Voltage, Collector To Emitter, Saturation

0.6 V

Voltage, Emitter To Base

5 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

2N4920GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N4920G

Manufacturer:

Quantity:

2 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N4920G

Manufacturer:

ONSemi

Quantity:

3 788

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2N4918 − 2N4920* Series

Medium−Power Plastic PNP

Silicon Transistors

designed for driver circuits, switching, and amplifier applications.

Features

1. The 1.0 A max I

2. Indicates JEDEC Registered Data for 2N4918 Series.

3. Recommend use of thermal compound for lowest thermal resistance.

**For additional information on our Pb−Free strategy and soldering details,

July, 2004 − Rev. 11

MAXIMUM RATINGS

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

Collector Current − Continuous

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Thermal Resistance,

These medium−power, high−performance plastic devices are

Pb−Free Package is Available**

Low Saturation Voltage − V

Excellent Power Dissipation Due to Thermopad Construction,

Excellent Safe Operating Area

Gain Specified to I

Complement to NPN 2N4921, 2N4922, 2N4923

Semiconductor Components Industries, LLC, 2004

3.0 A max value is based upon actual current−handling capability of the

device (See Figure 5).

(Note 1)

Derate above 25 C

Temperature Range

Junction−to−Case

= 30 W @ T

Characteristic

Rating

value is based upon JEDEC current gain requirements. The

= 25_C

= 1.0 A

Preferred Device

2N4918

2N4919

2N4920

2N4918

2N4919

2N4920

= 25 C

CE(sat)

(Note 3)

= 0.6 Vdc (Max) @ I

Symbol

(Note 2)

qJC

, T

CEO

CBO

EBO

stg

−65 to +150

Max

4.16

Value

0.24

5.0

1.0

3.0

1.0

= 1.0 A

Unit

W/ C

C/W

Unit

Vdc

Adc

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

*Preferred devices are recommended choices for future

use and best overall value.

POWER TRANSISTORS

GENERAL PURPOSE

3.0 A, 40−80 V, 30 W

ORDERING INFORMATION

MARKING DIAGRAM

http://onsemi.com

= 18, 19, 20

= Year

= Work Week

Publication Order Number:

YWW

49xx

CASE 077

STYLE 1

TO−225

2N4918/D

Related parts for 2N4920G

2N4920G Summary of contents

Page 1

... Thermal Resistance, Junction−to−Case 3. Recommend use of thermal compound for lowest thermal resistance. **For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev ...

Page 2

... Pulse Test 300 ms, Duty Cycle [ 2.0% ORDERING INFORMATION Device 2N4918 2N4919 2N4920 2N4920G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi- cations Brochure, BRD8011/D. 2N4918 − 2N4920* Series (T = 25_C unless otherwise noted) ...

Page 3

V BE(off APPROX − << APPROX 9 < < 500 ms ...

Page 4

D = 0.5 0.5 0.3 0.2 0.2 0.1 0.05 0.1 0.07 0.01 0.05 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 10 5 150 C 2 1.0 SECOND ...

Page 5

T = 150 C J 300 200 25 C 100 70 − 2.0 3.0 5 100 200 300 500 I , COLLECTOR CURRENT (mA) C Figure 8. Current ...

Page 6

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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