2N4920G ON Semiconductor, 2N4920G Datasheet - Page 5

• Manufacturer Part Number: 2N4920G
• Description: TRANS PNP GP 1A 80V TO225AA
• Manufacturer: ON Semiconductor
• Type: Medium Powerr

Specifications of 2N4920G

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Current - Collector Cutoff (max): 500µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 500mA, 1V
• Power - Max: 30W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 1 A
• Current, Gain: 10
• Frequency: 3 MHz
• Package Type: TO-225
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 4.16 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 0.6 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N4920GOS

1000
10
10
700
500
300
200
100
10
10
10
10
10
10
10
10
10
10
10
70
50
30
20
10
−1
− 2
8
7
6
5
4
3
2
1
0
4
3
2.0
−0.2
0
Figure 10. Effects of Base−Emitter Resistance
3.0 5.0
REVERSE
−0.1
Figure 12. Collector Cut−Off Region
30
V
10
BE
I
I
OBTAINED FROM
FIGURE 13
T
C
CES
J
, BASE−EMITTER VOLTAGE (VOLTS)
I
T
C
Figure 8. Current Gain
, JUNCTION TEMPERATURE ( C)
0
−55 C
25 C
, COLLECTOR CURRENT (mA)
J
T
I
CES
J
= 150 C
VALUES
100 C
20 30
25 C
= 150 C
FORWARD
60
+0.1
I
C
50
I
= I
C
= 10 I
CES
+0.2
100
CES
90
200 300 500
I
TYPICAL DC CHARACTERISTICS
C
+0.3
= 2x I
2N4918 − 2N4920* Series
V
120
CE
CES
V
V
CE
CE
+0.4
= 1.0 V
= 30 V
= 30 V
http://onsemi.com
1000
+0.5
2000
150
5
+2.5
+2.0
+1.5
+1.0
+0.5
−0.5
−1.0
−1.5
−2.0
−2.5
1.0
0.8
0.6
0.4
0.2
1.5
1.2
0.9
0.6
0.3
0
0
0
0.2
2.0
2.0
T
0.3 0.5
3.0 5.0
3.0
J
I
C
= 25 C
= 0.1 A
T
V
Figure 9. Collector Saturation Region
5.0
J
BE(sat)
Figure 13. Temperature Coefficients
V
= 25 C
BE
V
*APPLIES FOR I
*q
@ V
CE(sat)
q
10
1.0
@ I
10
VB
VC
Figure 11. “On” Voltage
CE
I
I
FOR V
C
C
FOR V
C
/I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
0.25 A
@ I
B
= 2.0 V
2.0
I
20 30 50
20 30
B
= 10
, BASE CURRENT (mA)
C
/I
BE
CE(sat)
3.0
B
= 10
C
/I
5.0
B
50
0.5 A
<
h FE @ V CE + 1.0 V
100 200 300
100 200
T
10
J
= 100 C to 150 C
T
J
20
= −55 C to +100 C
1.0 A
2
300 500 1000
30
500 1000
50
100
2000
2000
200