TIP41CG ON Semiconductor, TIP41CG Datasheet - Page 3

• Manufacturer Part Number: TIP41CG
• Description: TRANS NPN 6A 100V HI PWR TO220AB
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of TIP41CG

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 600mA, 6A
• Current - Collector Cutoff (max): 700µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 3A, 4V
• Power - Max: 2W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 6 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 6 A
• Dc Collector/base Gain Hfe Min: 30
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 6 A
• Current, Gain: 75
• Frequency: 3 MHz
• Package Type: TO-220AB
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.67 °C/W
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 1.5 V
• Voltage, Emitter To Base: 5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 6A
• Dc Current Gain (min): 30
• Frequency (max): 3MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TIP41CGOS

+11 V
DUTY CYCLE = 1.0%
R
D
0
B
1
Figure 2. Switching Time Test Circuit
MUST BE FAST RECOVERY TYPE, e.g.:
and R
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
t
- 9.0 V
1N5825 USED ABOVE I
MSD6100 USED BELOW I
r
, t
f
≤ 10 ns
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
25 ms
B
≈ 100 mA
B
≈ 100 mA
4.0
3.0
2.0
1.0
R
T
0
B
A
T
80
60
40
20
- 4 V
0
C
0
D
1
20
+ 30 V
V
CC
Figure 1. Power Derating
R
C
40
http://onsemi.com
SCOPE
T, TEMPERATURE (°C)
60
T
3
A
T
C
80
0.07
0.05
0.03
0.02
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.06
100
0.1
120
0.2
I
C
Figure 3. Turn-On Time
140
, COLLECTOR CURRENT (AMP)
160
0.4
t
r
0.6
t
1.0
d
@ V
BE(off)
2.0
T
V
I
C
J
CC
/I
≈ 5.0 V
= 25°C
B
= 30 V
= 10
4.0
6.0