TIP41CG ON Semiconductor, TIP41CG Datasheet - Page 5

• Manufacturer Part Number: TIP41CG
• Description: TRANS NPN 6A 100V HI PWR TO220AB
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of TIP41CG

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 600mA, 6A
• Current - Collector Cutoff (max): 700µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 3A, 4V
• Power - Max: 2W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 6 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 6 A
• Dc Collector/base Gain Hfe Min: 30
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 6 A
• Current, Gain: 75
• Frequency: 3 MHz
• Package Type: TO-220AB
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.67 °C/W
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 1.5 V
• Voltage, Emitter To Base: 5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 6A
• Dc Current Gain (min): 30
• Frequency (max): 3MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TIP41CGOS

10
10
10
500
300
200
100
10
10
10
10
7.0
5.0
2.0
1.6
1.2
0.8
0.4
70
50
30
20
10
-1
-2
-3
0
3
2
1
0
- 0.3
0.06
0.06
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
- 0.2 - 0.1
T
V
T
REVERSE
J
0.1
CE
0.1
J
= 150°C
= 25°C
T
Figure 12. Collector Cut-Off Region
= 30 V
- 55°C
J
25°C
= 150°C
V
V
V
BE(sat)
CE(sat)
V
BE
BE
Figure 8. DC Current Gain
0.2
0.2 0.3 0.4
Figure 10. “On” Voltages
I
I
, BASE-EMITTER VOLTAGE (VOLTS)
C
C
@ V
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
0
@ I
@ I
0.3
CE
C
C
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
/I
/I
100°C
I
B
= 4.0 V
B
C
0.4
= 10
= 10
= I
CES
0.6
0.6
FORWARD
1.0
1.0
25°C
V
CE
2.0 3.0 4.0
2.0
= 2.0 V
http://onsemi.com
4.0
+ 0.7
6.0
6.0
5
1.0 M
100 k
10 M
1.0 k
0.1 k
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
10 k
2.0
1.6
1.2
0.8
0.4
0
0
0.06
20
10
Figure 13. Effects of Base-Emitter Resistance
*APPLIES FOR I
* q
q
I
0.1
C
OBTAINED FROM FIGURE 12)
VB
I
C
Figure 9. Collector Saturation Region
VC
≈ I
40
Figure 11. Temperature Coefficients
20 30
= 1.0 A
FOR V
(TYPICAL I
FOR V
CES
I
C
T
BE
0.2 0.3
I
= 2 x I
J
C
CE(sat)
, JUNCTION TEMPERATURE (°C)
60
, COLLECTOR CURRENT (AMP)
CES
I
C
B
50
/I
CES
, BASE CURRENT (mA)
B
VALUES
≤ h
80
FE
2.5 A
0.5
/4
I
C
100
+ 25°C to + 150°C
+ 25°C to + 150°C
= 10 x I
- 55°C to + 25°C
- 55°C to + 25°C
100
1.0
CES
200
120
300
5.0 A
2.0 3.0 4.0
V
T
CE
J
500
= 25°C
140
= 30 V
1000
160
6.0