MJ21194G ON Semiconductor, MJ21194G Datasheet

MJ21194G

Manufacturer Part Number

MJ21194G

Description

TRANS PWR NPN 16A 250V TO3

Manufacturer

ON Semiconductor

Type

Powerr

Datasheets

1.MJ21193G.pdf (6 pages)

2.MJ21194G.pdf (3 pages)

Specifications of MJ21194G

Transistor Type

NPN

Current - Collector (ic) (max)

16A

Voltage - Collector Emitter Breakdown (max)

250V

Vce Saturation (max) @ Ib, Ic

4V @ 3.2A, 16A

Current - Collector Cutoff (max)

100µA

Dc Current Gain (hfe) (min) @ Ic, Vce

25 @ 8A, 5V

Power - Max

250W

Frequency - Transition

4MHz

Mounting Type

Chassis Mount

Package / Case

TO-204, TO-3

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

250 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

16 A

Power Dissipation

250 W

Maximum Operating Temperature

+ 200 C

Continuous Collector Current

16 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

4 MHz

Minimum Operating Temperature

- 65 C

Current, Collector

16 A

Current, Gain

Frequency

4 MHz

Package Type

TO-204AA (TO-3)

Polarity

NPN

Primary Type

Resistance, Thermal, Junction To Case

0.7 °C/W

Voltage, Breakdown, Collector To Emitter

250 V

Voltage, Collector To Base

400 V

Voltage, Collector To Emitter

250 V

Voltage, Collector To Emitter, Saturation

4 V

Voltage, Emitter To Base

5 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MJ21194GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJ21194G

Manufacturer:

Quantity:

501

Current page: 1 of 6
Download datasheet (158Kb)

MJ21193, MJ21194

Silicon Power Transistors

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. (continued)

*For additional information on our Pb−Free strategy and soldering details, please

April, 2009 − Rev. 5

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector−Emitter Voltage − 1.5 V

Collector Current − Continuous

Base Current − Continuous

Total Power Dissipation @ T

Derate Above 25°C

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Case

The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter

Total Harmonic Distortion Characterized

High DC Current Gain − h

Excellent Gain Linearity

High SOA: 2.5 A, 80 V, 1 Second

Pb−Free Packages are Available*

Characteristic

Rating

Peak (Note 1)

Preferred Device

= 25°C

= 25 Min @ I

Symbol

, T

CEO

CBO

EBO

CEX

qJC

stg

= 8 Adc

− 65 to +200

Value

1.43

Max

250

400

250

0.7

W/°C

°C/W

Unit

Vdc

Adc

°C

Preferred devices are recommended choices for future use

and best overall value.

†For information on tape and reel specifications,

MJ21193

MJ21193G

MJ21194

MJ21194G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

16 AMP COMPLEMENTARY

Device

TO−204AA (TO−3)

250 VOLTS, 250 WATTS

CASE 1−07

STYLE 1

ORDERING INFORMATION

MJ2119x = Device Code

MEX

SILICON POWER

TRANSISTORS

http://onsemi.com

(Pb−Free)

Package

TO−3

= Pb−Free Package

= Assembly Location

= Year

= Work Week

= Country of Origin

x = 3 or 4

Publication Order Number:

100 Units / Tray

Shipping

MJ2119xG

MARKING

DIAGRAM

AYYWW

MEX

MJ21193/D

†

Related parts for MJ21194G

MJ21194G Summary of contents

Page 1

... Units / Tray MJ21193G TO−3 100 Units / Tray (Pb−Free) MJ21194 TO−3 100 Units / Tray MJ21194G TO−3 100 Units / Tray (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (I = 100 mAdc Collector Cutoff Current (V = 200 Vdc Emitter Cutoff Current ( Vdc ...

Page 3

PNP MJ21193 1000 T = 100°C J 25°C 100 0.1 1.0 I COLLECTOR CURRENT (AMPS) C Figure 3. DC Current Gain, V PNP MJ21193 1000 T = 100°C J 25°C 100 - 25°C V ...

Page 4

PNP MJ21193 3.0 2 25° 2 1.5 1.0 V BE(sat) 0.5 V CE(sat) 0 0.1 1 COLLECTOR CURRENT (AMPS) C Figure 9. Typical Saturation Voltages PNP MJ21193 10 ...

Page 5

25° 1000 MHz (test) 100 0.1 1 REVERSE VOLTAGE (VOLTS) R Figure 14. MJ21193 Typical Capacitance 1.2 1.1 1.0 0.9 0.8 0.7 0.6 10 AUDIO PRECISION MODEL ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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