MJ21194G ON Semiconductor, MJ21194G Datasheet - Page 2

• Manufacturer Part Number: MJ21194G
• Description: TRANS PWR NPN 16A 250V TO3
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJ21194G

• Transistor Type: NPN
• Current - Collector (ic) (max): 16A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 4V @ 3.2A, 16A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 8A, 5V
• Power - Max: 250W
• Frequency - Transition: 4MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 16 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 16 A
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Frequency: 4 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 16 A
• Current, Gain: 8
• Frequency: 4 MHz
• Package Type: TO-204AA (TO-3)
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.7 °C/W
• Voltage, Breakdown, Collector To Emitter: 250 V
• Voltage, Collector To Base: 400 V
• Voltage, Collector To Emitter: 250 V
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJ21194GOS

NOTE:
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
SECOND BREAKDOWN
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
Second Breakdown Collector Current with Base Forward Biased
DC Current Gain
Base−Emitter On Voltage
Collector−Emitter Saturation Voltage
Total Harmonic Distortion at the Output
Current Gain Bandwidth Product
Output Capacitance
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
(I
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
V
(Matched pair h
(I
(V
0.1
C
C
C
C
C
C
C
RMS
CE
CE
CE
CE
CE
CB
= 100 mAdc, I
= 8 Adc, V
= 16 Adc, I
= 8 Adc, V
= 8 Adc, I
= 16 Adc, I
= 1 Adc, V
T
f
5 V
test
V
J
Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
= 200 Vdc, I
= 5 Vdc, I
= 250 Vdc, V
= 50 Vdc, t = 1 s (non−repetitive)
= 80 Vdc, t = 1 s (non−repetitive)
= 10 Vdc, I
CE
= 25°C
= 28.3 V, f = 1 kHz, P
= 1 MHz
= 10 V
Figure 1. Typical Current Gain
B
CE
CE
CE
B
B
= 0.8 Adc)
C
I
FE
C
= 5 Adc)
= 3.2 Adc)
E
= 0)
= 5 Vdc)
= 5 Vdc)
= 10 Vdc, f
B
B
COLLECTOR CURRENT (AMPS)
= 0, f
BE(off)
= 50 @ 5 A/5 V)
Bandwidth Product
= 0)
= 0)
PNP MJ21193
test
= 1.5 Vdc)
Characteristic
= 1 MHz)
LOAD
test
1.0
= 1 MHz)
= 100 W
(T
C
RMS
= 25°C unless otherwise noted)
h
unmatched
h
matched
FE
FE
http://onsemi.com
10
2
7.0
5.0
4.0
3.0
2.0
1.0
8.0
6.0
0
0.1
V
Symbol
V
V
CEO(sus)
CE(sat)
T
f
I
I
I
BE(on)
T
C
test
CEO
I
h
EBO
CEX
J
S/b
f
FE
HD
T
ob
= 25°C
= 1 MHz
Figure 2. Typical Current Gain
I
C
COLLECTOR CURRENT (AMPS)
Bandwidth Product
NPN MJ21194
Min
250
2.5
25
−
−
−
5
8
−
−
−
−
−
4
−
1.0
0.08
Typ
0.8
−
−
−
−
−
−
−
−
−
−
−
−
V
CE
Max
100
100
100
500
2.2
1.4
75
−
−
−
4
−
−
−
= 5 V
10 V
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Adc
Vdc
Vdc
pF
%
10