TRANS NPN 10A 100V HI PWR TO-218

TIP33CG

Manufacturer Part NumberTIP33CG
DescriptionTRANS NPN 10A 100V HI PWR TO-218
ManufacturerON Semiconductor
TIP33CG datasheet
 

Specifications of TIP33CG

Transistor TypeNPNCurrent - Collector (ic) (max)10A
Voltage - Collector Emitter Breakdown (max)100VVce Saturation (max) @ Ib, Ic4V @ 2.5A, 10A
Current - Collector Cutoff (max)700µADc Current Gain (hfe) (min) @ Ic, Vce20 @ 3A, 4V
Power - Max80WFrequency - Transition3MHz
Mounting TypeThrough HolePackage / CaseSOT-93, TO-218 (Straight Leads)
Transistor PolarityNPNMounting StyleSMD/SMT
Collector- Emitter Voltage Vceo Max100 VEmitter- Base Voltage Vebo5 V
Maximum Dc Collector Current10 APower Dissipation80 W
Maximum Operating Temperature+ 150 CContinuous Collector Current10 A
Dc Collector/base Gain Hfe Min40Maximum Operating Frequency3 MHz
Minimum Operating Temperature- 65 CNumber Of Elements1
Collector-emitter Voltage100VCollector-base Voltage100V
Emitter-base Voltage5VCollector Current (dc) (max)10A
Dc Current Gain (min)40Frequency (max)3MHz
Operating Temp Range-65C to 150COperating Temperature ClassificationMilitary
MountingThrough HolePin Count3 +Tab
Package TypeSOT-93Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesTIP33CGOS  
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TIP33A, TIP33C
NPN High−Power Transistors
Designed for general−purpose power amplifier and switching
applications.
Features
ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V−0 @ 0.125 in
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
TIP33A
TIP33C
Collector − Base Voltage
TIP33A
TIP33C
Emitter − Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current − Continuous
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 3
Symbol
Value
Unit
V
60
Vdc
CEO
100
V
60
Vdc
CBO
100
V
5.0
Vdc
EBO
I
10
Adc
C
15
Apk
I
3.0
Adc
B
P
80
Watts
D
0.64
W/°C
°C
T
, T
– 65 to
J
stg
+150
Symbol
Max
Unit
°C/W
R
1.56
qJC
°C/W
R
35.7
qJA
TIP33A
TIP33AG
TIP33C
TIP33CG
1
http://onsemi.com
10 AMPERE
NPN SILICON
POWER TRANSISTORS
60 & 100 VOLT, 80 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
MARKING DIAGRAM
AYWWG
TIP33x
A
= Assembly Location
Y
= Year
WW
= Work Week
TIP33x
= Device Code
x
= A or C
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
TO−218
30 Units / Rail
TO−218
30 Units / Rail
(Pb−Free)
TO−218
30 Units / Rail
TO−218
30 Units / Rail
(Pb−Free)
Publication Order Number:
TIP33C/D

TIP33CG Summary of contents

  • Page 1

    ... J stg +150 Symbol Max Unit °C/W R 1.56 qJC °C/W R 35.7 qJA TIP33A TIP33AG TIP33C TIP33CG 1 http://onsemi.com 10 AMPERE NPN SILICON POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS SOT−93 (TO−218) CASE 340D STYLE 1 MARKING DIAGRAM AYWWG TIP33x A = Assembly Location Y = Year WW = Work Week ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note mA Collector−Emitter Cutoff Current ( ...

  • Page 3

    SECONDARY BREAKDOWN LIMIT 1.0 BONDING WIRE LIMIT 0.5 THERMAL LIMIT 0 25°C C 0.1 1.0 2.0 3.0 5.0 7 COLLECTOR−EMITTER ...

  • Page 4

    ... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. ...