TRANSISTOR NPN 60V 15A BIPO TO-3

2N3055AG

Manufacturer Part Number2N3055AG
DescriptionTRANSISTOR NPN 60V 15A BIPO TO-3
ManufacturerON Semiconductor
TypeHigh Power
2N3055AG datasheets
 

Specifications of 2N3055AG

Transistor TypeNPNCurrent - Collector (ic) (max)15A
Voltage - Collector Emitter Breakdown (max)60VVce Saturation (max) @ Ib, Ic5V @ 7A, 15A
Current - Collector Cutoff (max)700µADc Current Gain (hfe) (min) @ Ic, Vce10 @ 4A, 2V
Power - Max115WFrequency - Transition6MHz
Mounting TypeChassis MountPackage / CaseTO-204, TO-3
Transistor PolarityNPNMounting StyleThrough Hole
Collector- Emitter Voltage Vceo Max60 VEmitter- Base Voltage Vebo7 V
Maximum Dc Collector Current15 APower Dissipation115 W
Maximum Operating Temperature+ 200 CContinuous Collector Current15 A
Dc Collector/base Gain Hfe Min10Maximum Operating Frequency6 MHz
Minimum Operating Temperature- 65 CCurrent, Collector15 A
Current, Gain5Frequency0.8 MHz
Package TypeTO-204AA (TO-3)PolarityNPN
Primary TypeSiResistance, Thermal, Junction To Case1.52 °C/W
Voltage, Breakdown, Collector To Emitter60 VVoltage, Collector To Base100 V
Voltage, Collector To Emitter60 VVoltage, Collector To Emitter, Saturation5 V
Voltage, Emitter To Base7 VLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names2N3055AG
2N3055AGOS
  
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2N3055A (NPN),
MJ15015 (NPN),
MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices
Complementary Silicon
High−Power Transistors
These PowerBaset complementary transistors are designed for
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
Current−Gain − Bandwidth−Product @ I
f
= 0.8 MHz (Min) − NPN
T
= 2.2 MHz (Min) − PNP
Safe Operating Area − Rated to 60 V and 120 V, Respectively
Pb−Free Packages are Available*
MAXIMUM RATINGS
(Note 1)
Rating
Collector−Emitter Voltage
2N3055A
MJ15015, MJ15016
Collector−Base Voltage
2N3055A
MJ15015, MJ15016
Collector−Emitter Voltage Base
Reversed Biased
2N3055A
MJ15015, MJ15016
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Device Dissipation @ T
= 25_C
C
Derate above 25_C
2N3055A
Total Device Dissipation @ T
= 25_C
C
Derate above 25_C
MJ15015, MJ15016
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6
60, 120 VOLTS − 115, 180 WATTS
= 1.0 Adc
C
Symbol
Value
Unit
V
Vdc
CEO
60
120
V
Vdc
CBO
100
200
V
Vdc
CEV
100
200
V
7.0
Vdc
EBO
I
15
Adc
C
I
7.0
Adc
B
P
115
W
D
0.65
W/_C
180
1.03
_C
T
, T
−65 to +200
J
stg
Symbol
Max
Max
Unit
_C/W
R
1.52
0.98
qJC
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
http://onsemi.com
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAMS
2N3055AG
MJ1501xG
AYWW
AYWW
MEX
MEX
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Publication Order Number:
2N3055A/D

2N3055AG Summary of contents

  • Page 1

    ... Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAMS 2N3055AG MJ1501xG AYWW AYWW MEX MEX 2N3055A = Device Code MJ1501x = Device Code Pb−Free Package A ...

  • Page 2

    MJ15015 (NPN), MJ15016 (PNP) Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î ELECTRICAL ...

  • Page 3

    MJ15015 (NPN), MJ15016 (PNP) 200 150 100 200 T = 150°C J 100 70 50 −55 ° 25° 4 0.2 0.3 0.5 0.7 1 ...

  • Page 4

    MJ15015 (NPN), MJ15016 (PNP + −11 V ≤ −5 V DUTY CYCLE = 1.0% Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) ...

  • Page 5

    ... Safe Operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. ORDERING INFORMATION Device 2N3055A 2N3055AG MJ15015 MJ15015G MJ15016 MJ15016G COLLECTOR CUT−OFF REGION PNP ...

  • Page 6

    ... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...