2N3055AG ON Semiconductor, 2N3055AG Datasheet - Page 5

• Manufacturer Part Number: 2N3055AG
• Description: TRANSISTOR NPN 60V 15A BIPO TO-3
• Manufacturer: ON Semiconductor
• Type: High Powerr

Specifications of 2N3055AG

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 5V @ 7A, 15A
• Current - Collector Cutoff (max): 700µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 4A, 2V
• Power - Max: 115W
• Frequency - Transition: 6MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 15 A
• Dc Collector/base Gain Hfe Min: 10
• Maximum Operating Frequency: 6 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 15 A
• Current, Gain: 5
• Frequency: 0.8 MHz
• Package Type: TO-204AA (TO-3)
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.52 °C/W
• Voltage, Breakdown, Collector To Emitter: 60 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 60 V
• Voltage, Collector To Emitter, Saturation: 5 V
• Voltage, Emitter To Base: 7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N3055AG; 2N3055AGOS

a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
ORDERING INFORMATION
10,000
2N3055A
2N3055AG
MJ15015
MJ15015G
MJ15016
MJ15016G
There are two limitations on the power handling ability of
1000
0.01
20
10
100
1.0
0.1
5
2
1
10
+0.2
NPN
Figure 12. Forward Bias Safe Operating Area
V
T
CE
J
REVERSE
= 150°C
100°C
+0.1
= 30 V
V
CE
BONDING WIRE LIMIT
THERMAL LIMIT @ T
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
25°C
V
Figure 10. 2N3055A, MJ15015
10
BE
Device
, BASE−EMITTER VOLTAGE (VOLTS)
0
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
−0.1
2N3055A
20
I
FORWARD
C
= I
C
CES
= 25°C
−0.2
COLLECTOR CUT−OFF REGION
−0.3
60
−0.4
100 ms
1 ms
100 ms
dc
30 ms
C
http://onsemi.com
− V
CE
100
−0.5
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−204
TO−204
TO−204
TO−204
TO−204
TO−204
5
0.001
T
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.
1000
0.01
100
J(pk)
1.0
0.1
5.0
2.0
1.0
0.5
0.2
10
20
10
The data of Figures 12 and 13 is based on T
−0.2
15
PNP
T
Figure 13. Forward Bias Safe Operating Area
is variable depending on power level. Second
J
V
REVERSE
= 150°C
100°C
CE
−0.1
25°C
20
= 30 V
V
CE
V
BONDING WIRE LIMIT
THERMAL LIMIT @ T
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
BE
, BASE−EMITTER VOLTAGE (VOLTS)
0
30
Figure 11. MJ15016
MJ15015, MJ15016
FORWARD
+0.1
I
C
= I
CES
100 Units / Tray
100 Units / Tray
C
+0.2
= 25°C
Shipping
60
+0.3
+0.4
C
100
= 25_C;
100 ms
0.1 ms
1.0 ms
dc
+0.5
120