UPC8120T-E3 NEC, UPC8120T-E3 Datasheet
UPC8120T-E3
Specifications of UPC8120T-E3
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UPC8120T-E3 Summary of contents
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... TAPE AND REEL PACKAGING OPTION AVAILABLE • GAIN CONTROL RANGE DESCRIPTION The UPC8120T is a Silicon Monolithic Microwave Integrated Circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with f ing 20 GHz. This device is suitable as an Automatic Gain Control Amplifier stage in cellular radios, GPS receivers, PCN, and test/measurement equipment ...
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... Note: 1. Padj ≤ -60 dBc @ ∆f = ± 50 kHz. Wave form condition: π/4 QPSK modulation signal, data rate = 42 kbps, roll off ratio = 0.5, PN9 pattern. Description Device Gain Slope vs. V AGC UPC8120T Up PARAMETERS UNITS MIN TYP MAX Supply Voltage V 2.7 Gain Control Voltage V 0 ...
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... F V AGC 6 0 OUT 900 6.8nH 15nH 1.5pF 1900 100nH 5nH (TRL) 2.2pF UPC8120T (Top View) (Bottom View Package Markings: UPC8120T - C2N PART NUMBER QUANTITY UPC8120T-E3 3K/Reel 0.1 F 0.1 F Unless Noted All Other Caps = 1000pF Internet: http://WWW.CEL.COM OUT AGC 01/17/2001 ...