AP512 TriQuint, AP512 Datasheet

AP512

Manufacturer Part Number

AP512

Description

RF Amplifier 2110-2170MHz 28.5dB Gain

Manufacturer

TriQuint

Type

Power Amplifierr

Datasheet

1.AP512-PCB.pdf (5 pages)

Specifications of AP512

Operating Frequency

2110 MHz to 2170 MHz

P1db

39 dBm at 2140 MHz

Operating Supply Voltage

12 V

Supply Current

1.7 A

Maximum Operating Temperature

+ 85 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 40 C

Number Of Channels

1 Channel

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 5
Download datasheet (269Kb)

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com

Product Features

•

Applications

•

Specifications

1. Test conditions unless otherwise noted: 25ºC.

2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).

Absolute Maximum Rating

Operation of this device above any of these parameters may cause permanent damage.

Parameter

Operational Bandwidth

Test Frequency

Adjacent Channel Leakage Ratio

Power Gain

Input Return Loss

Output Return Loss

Output P1dB

Output IP3

Operating Current

Quiescent Current, Icq

Device Voltage, Vcc

Device Voltage, Vpd

Ruggedness

Parameter

Operating Case Temperature

Storage Temperature

RF Input Power (continuous)

2110 – 2170 MHz

28.5 dB Gain

-55 dBc ACLR

+39 dBm P1dB

+12 V Single Supply

Power Down Mode

Bias Current Adjustable

RoHS-complaint flange-mount pkg

Final stage amplifiers for Repeaters

Optimized for driver amplifier PA

mobile infrastructure

WCDMA signal (3GPP Test Model 1+ 32 DPCH)

@ 28 dBm W-CDMA linear power

AP512

UMTS-band 8W HBT Amplifier Module

(2)

(3)

(2)

(1)

Units

VSWR

MHz

Rating

-40 to +85 °C

-55 to +150 °C

+10 dBm

dBm

The AP512 is a high dynamic range power amplifier in a

RoHS-compliant flange-mount package.

amplifier module has 28.5 dB gain, while being able to

achieve high performance for UMTS-band applications with

+39 dBm of compressed 1dB power. The module has been

internally optimized for linearity to provide -55 dBc ALCR

at 28 dBm power for W-CDMA applications.

The AP512 uses a high reliability InGaP/GaAs HBT process

technology and does not require any external matching

components. The module operates off of a +12V supply and

does not requiring any negative biasing voltages; an internal

active bias allows the amplifier to maintain high linearity

over temperature. It has the added feature of a +5V power

down control pin. A low-cost metal housing allows the

device to have a low thermal resistance and achieves over

100 years MTTF. All devices are 100% RF and DC tested.

The AP512 is targeted for use as a driver or final stage

amplifier in wireless infrastructure where high linearity and

high power is required. This combination makes the device an

excellent candidate for next generation multi-carrier 3G base

stations or repeaters using the UMTS frequency band.

dBc

Min

1.55

10:1

Product Description

2110 – 2170

Typ

2140

28.5

1.72

1.69

+39

+53

+12

-55

Max

1.80

-50

Ordering Information

Part No.

AP512

AP512-PCB

Test Conditions

W-CDMA +28 dBm Total Power, ±5 MHz offset

Pout = +28 dBm

Pout = +28 dBm/tone, Δf = 1 MHz

Pout = +28 dBm

Pull-down voltage: 0V = “OFF”, 5V=”ON”

Pout = +39 dBm CW, all phases

The multi-stage

Specifications and information are subject to change without notice

Description

UMTS-band 8W HBT Amplifier Module

Fully-Assembled Evaluation Board

Functional Diagram

Product Information

Pin No.

Case

2 / 4

3 / 5

Top View

RF Output

Page 1 of 5 June 2006

Function

RF Input

Ground

Vpd

Vcc

Related parts for AP512

AP512 Summary of contents

Page 1

... MTTF. All devices are 100% RF and DC tested. The AP512 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations or repeaters using the UMTS frequency band ...

Page 2

... Class AB Configuration (AP512-PCB) The AP512-PCB and AP512 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for the amplifier is set at 0 Ω in this configuration. Increasing that value will decrease the quiescent and operating current of the amplifier module, as described on the next page ...

Page 3

... AP512 UMTS-band 8W HBT Amplifier Module Performance Graphs (AP512-PCB 2110MHz 26 2140MHz 2170MHz W-CDMA 3GPP Test Model 1+32, Δf=±5 MHz, Vcc=12V, Icq=1.7A, 25 °C -40 2110MHz 2140MHz -45 2170MHz -50 -55 -60 24 Average Output Power (dBm) PAE vs. Output Power Vcc=12V, Icq=1.7A, 25 °C 10 2110MHz 2140MHz 2170MHz 1 24 ...

Page 4

... AP512 UMTS-band 8W HBT Amplifier Module The MTTF of the AP512 can be calculated by first determining how much power is being dissipated by the amplifier module. Because the device’s intended application power amplifier pre-driver or final stage output amplifier, the output RF power of the amplifier will help lower the overall power dissipation ...

Page 5

... Outline Drawing The device will be marked with an “AP512” designator with an alphanumeric lot code on the top surface of the package noted as “ABCD” on the drawing. manufacturing date will also be printed as “XXYY”, where the “XX” represents the week number from 1 – 52. ...

Related keywords

AP512 datasheet
AP512 data sheet
AP512 pdf datasheet
AP512 component
AP512 part
AP512 distributor
AP512 RoHS
AP512 datasheet download