ZXTN2010GTA Diodes Zetex, ZXTN2010GTA Datasheet - Page 2

• Manufacturer Part Number: ZXTN2010GTA
• Description: TRANS NPN LO SAT 60V 6A SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXTN2010GTA

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 260mV @ 300mA, 6A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 1V
• Power - Max: 3W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: ZXTN2010GTR

ABSOLUTE MAXIMUM RATINGS
ZXTN2010G
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient
S E M I C O N D U C T O R S
(a)
A
A
=25°C
=25°C
(a)
(a)
(b)
SYMBOL
R
2
SYMBOL
BV
BV
BV
I
I
P
P
T
JA
C
CM
D
D
j
, T
CBO
CEO
EBO
stg
-55 to +150
VALUE
42
LIMIT
12.8
150
3.0
1.6
60
20
24
7
6
ISSUE 2 - MAY 2006
mW/°C
mW/°C
UNIT
°C/W
UNIT
°C
W
W
V
V
V
A
A